United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Po-Chih Wu

Yi-Wei Chen

Chih-Chien Liu

Tsun-Min Cheng

Pin-Hong Chen

Chih-Chieh Tsai

Chun-Chieh Chiu

Tzu-Chieh Chen

Kai-Jiun Chang

Yi-An Huang

Chia-Chen Wu

Ji-Min Lin

Tzu-Hao Liu

A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Growing community of inventors

Tainan, Taiwan

Po-Chih Wu