Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Chien Huang

Chung-Hung Lin

Chih-Wei Wen

A method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

Apparatus for fabricating a semiconductor device and method for fabricating semiconductor device

The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

The present disclosure provides an apparatus for fabricating a semiconductor device, including a first chamber for accommodating a mask, and a first ionizer in the first chamber, wherein the first ionizer is adjacent to the mask.

Growing community of inventors

Hsinchu, Taiwan

Po-Chien Huang