Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Cheng Wang

Wei-Yang Lee

Pinyen Lin

De-Fang Chen

Han-Yu Lin

Ting-Yeh Chen

Wei-Yen Woon

Kenichi Sano

Kuan-Kan Hu

Szu-Hua Chen

Che Chi Shih

The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

Semiconductor devices with a rare earth metal oxide layer

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor fin and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and multiple inner spacers. Each of the inner spacers is between the gate stack and the source/drain epitaxial structure. The semiconductor device structure further includes an isolation structure between the semiconductor fin and the source/drain epitaxial structure.

Structure and formation method of semiconductor device with nanosheet structure

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Kaohsiung, Taiwan

Po-Cheng Wang