Stmicroelectronics International N.v.

Piyush Jain

Vivek Asthana

Naveen Batra

Harsh Rawat

Nitin Jain

Gangaikondan Subramani Visweswaran

A method of operating a memory device includes providing a first voltage to a memory array, providing a second voltage to a peripheral logic circuit, receiving an access request, and in response to the access request, increasing a third voltage of a bit line of the memory array during a precharge phase.

Method and circuit to enable wide supply voltage difference in multi-supply memory

A circuit can be used, for example, with a multi-supply memory device. The circuit includes a first conductor and a second conductor. A first transistor has a current path coupled between the first conductor and the second conductor. A second transistor also has a current path coupled between the first conductor and the second conductor. A pulse generator circuit has an input coupled to a control terminal of the first transistor and an output coupled to a control terminal of the second transistor.

A cache includes a number of cache ways each having tag memory fields and corresponding data fields. With a simultaneous read-write operation defined by a read memory address (read tag portion and read index portion) and a write memory address (write tag portion and write index portion), the cache determines a read cache hit and reads from one cache way as indicated by the read tag and index portions of the read memory address. Furthermore, a determination is made as to whether a write as indicated by the write tag and index portions of the write memory address would be made in a same one cache way as the read so as to be in conflict. If such a conflict exists, the write is instead effectuated, simultaneously with the read to the one cache way, to a different cache way than is used for the read.

Cache memory system with simultaneous read-write in single cycle

A method and apparatus for operating a memory device with wider difference in array and periphery voltage is presented. The memory device includes a bit line, a complementary bit line, a memory cell, a first pre-charge circuit, and a second pre-charge circuit. The memory cell, the first pre-charge circuit, and the second pre-charge circuit are coupled between the bit line and the complementary bit line. The first pre-charge circuit is configured to pre-charge the bit line and the complementary bit line to a first voltage level. The second pre-charge circuit is configured to pre-charge the bit line and the complementary bit line to a second voltage level that is different than the first voltage level. In some examples, two precharge circuits are configured to operate such that memory access is ensured to be static noise margin safe even under wider difference between two voltage levels.

A pseudo dual port memory includes a set of dual port memory cells having a read port and a write port, and configured to store data words in each of a plurality of addressed locations, and a set of single port memory cells having a read/write port, and configured to store data words in each of a plurality of addressed locations. A valid data storage unit is configured to store valid bits corresponding to the addressed locations of the set of dual port memory cells and the set of single port memory cells. Control circuitry is configured to access the addressed locations of the set of dual port memory cells and the set of single port memory cells. The control circuitry performs a simultaneous write operation using the write port of the set of dual port memory cells and the read/write port of the set of single port memory cells, and updates corresponding valid bits in the valid data storage unit, and performs a parallel read operation, at a same addressed location of the set of dual port memory cells and the set of single port memory cells, using the read port of the set of dual port memory cells and the read/write port of the set of single port memory cells, and determining which stored data word is valid based upon the corresponding valid bits in the valid data storage unit.

Pseudo dual port memory using a dual port cell and a single port cell with associated valid data bits and related methods

A read only memory cell circuit is provided. The memory cell circuit includes at least one memory cell. A pair of bit lines associated with each memory cell is provided which form a complementary output. The at least one memory cell is configured to be coupled to first or second of the bit line pair.

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Ghaziabad, India

Piyush Jain