Arm Limited

Piyush Agarwal

Akshay Kumar

Azeez Jennudin Bhavnagarwala

Lucian Shifren

Shidhartha Das

Bal S Sandhu

Mudit Bhargava

Glen Arnold Rosendale

Robert Campbell Aitken

Vivek Asthana

Andreas Hansson

Shruti Aggarwal

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.

Method, system and device for non-volatile memory device operation

Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.

Controlling current through correlated electron switch elements during programming operations

To sense an impedance state of one or more correlated electron switch elements, a bit-line may be precharged to a voltage level that is less than a precharge voltage level for a sense amplifier, and a bit-line may be discharged through one or more correlated electron switch elements. A bit-line may be buffered from a sense amplifier via an electronic switch device.

Bit-line sensing for correlated electron switch elements

Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analog or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

Electronic filter circuit

A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Selective writes in a storage element

Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.

Digital to analog conversion with correlated electron switch devices

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Subject matter provided may relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline.

Memory devices formed from correlated electron materials

Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.

Method, system and device for power-up operation

An analog-to-digital converter (ADC) and method of operation thereof are provided for converting an analog signal to a digital signal. The ADC utilizes Correlated Electron Material (CEM) devices that may contain a transition metal oxide (TMO), such as Nickel Oxide (NiO). The ADC may include an interconnect circuit that is operable to couple a power supply to the CEM devices. The power supply is controlled to program the resistance of the CEM devices and thereby control performance characteristics of the ADC.

Growing community of inventors

Noida, India

Piyush Agarwal