Advanced Micro Devices Corporation

Pirainder S Lall

Thomas J Sonderman

Matthew S Ryskoski

Eric Omar Green

Michael J McBride

Jesse C Ramos

Mark E Culp

The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.

Advanced process control of thermal oxidation processes, and systems for accomplishing same

The present invention is generally directed to various methods of controlling properties and characteristics of a gate insulation layer based upon electrical test data, and a system for performing same. In one illustrative embodiment, the method comprises performing at least one electrical test on at least one semiconductor device, determining at least one parameter of at least one process operation to be performed to form at least one gate insulation layer on a subsequently formed semiconductor device based upon electrical data obtained from the electrical test, and performing at least one process operation comprised of the determined parameter to form the gate insulation layer.

Methods of controlling properties and characteristics of a gate insulation layer based upon electrical test data, and system for performing same

The present invention is generally directed to various methods of controlling gate electrode doping, and various systems for accomplishing same. In one illustrative embodiment, the method disclosed herein comprises performing at least one process operation to form a doped layer of gate electrode material, measuring a sheet resistance of the doped layer of gate electrode material and adjusting at least one parameter of at least one process if the measured sheet resistance does not fall within acceptable limits. In one embodiment, the system is comprised of a process tool for performing at least one process operation to form a doped layer of gate electrode material, a metrology tool for measuring a sheet resistance of the doped layer of gate electrode material and a controller for adjusting at least one parameter of at least one process operation if the measured sheet resistance of the doped layer of gate electrode material does not fall within acceptable limits.

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Austin, TX, United States of America

Pirainder S Lall