Merck Patent Gmbh

Promerus, Lcc

Flexenable Technology Limited

Piotr Wierzchowiec

Pawel Miskiewicz

Larry Funderburk Rhodes

Li Wei Tan

Andrew Bell

Paul Craig Brookes

David Sparrowe

Edmund Elce

Pramod Kandanarachchi

Hendra Ng

Philip Edward May

Mark James

Kazuyoshi Fujita

Toby Cull

Tomas Backlund

Edgar Kluge

Steven J Smith

Magda Goncalves-Miskiewicz

Stephen Bain

Frank Egon Meyer

Hugh A Burgoon

David Christoph Müller

Irina Afonina

David Christoph Mueller

Lichun Chen

Rashmi Bhintade

Andromachi Malandraki

Steven Smith

Ng Hendra

The present invention relates to novel formulations comprising an organic semiconductor (OSC) and one or more organic solvents. The formulation comprises a viscosity at 25° C. of less than 15 mPas and the boiling point of the solvent is at most 400° C. Furthermore, the present invention describes the use of these formulations as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations.

Formulation and method for preparation of organic electronic devices

The present invention relates to a novel electron transfer composition comprising one or more metal ion comprising compound, the use of such electron transfer composition in organic electronic devices, particularly in photodiodes, as well as such organic electronic devices, particularly photodiodes.

Electron transfer composition for use in an electron injection layer for organic electronic devices

The invention generally relates to formulations for use in organic semiconductor layers of organic electronic devices, and more specifically in organic field effect transistors, to organic semiconductor layers prepared from such formulations, and to organic electronic devices and organic field effect transistors encompassing such organic semiconductor layers.

Organic semiconducting formulation

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Interlayer for electronic devices

The invention relates to organic electronic devices containing polycycloolefin planarization layers between the substrate and a functional layer such as a semiconducting layer, dielectric layer, or electrode; to the use of polycycloolefins as a planarization layer on the substrate of an organic electronic device; and to processes for preparing such polycycloolefin planarization layers and organic electronic devices.

Planarization layer for organic electronic devices

Embodiments in accordance with the present invention relate generally to formulations for use in organic semiconductor layers of organic electronic devices, and more specifically in organic field effect transistors, to organic semiconductor layers prepared from such formulations, and to organic electronic devices and organic field effect transistors encompassing such organic semiconductor layers.

Polycycloolefinic polymer formulation for an organic semiconductor

The present invention relates to novel formulations comprising an organic semiconductor (OSC) and one or more organic solvents. The formulation comprises a viscosity at 25&#xb0; C. of less than 15 mPas and the boiling point of the solvent is at most 400&#xb0; C. Furthermore, the present invention describes the use of these formulations as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations.

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Southampton, United Kingdom

Piotr Wierzchowiec