Aixtron Ag

Aixtron, Inc.

Piotr Strzyzewski

Marcus Schumacher

Martin Dauelsberg

Gerd Strauch

Peter Baumann

Johannes Lindner

Holger Juergensen

Antonio Mesquida Küsters

A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.

Apparatus and method for high-throughput chemical vapor deposition

The invention relates to a method and to a device for treating semiconductor substrates. In conventional systems, the especially uncoated semiconductor substrates are fed to a treatment device through a charging sluice, said charging sluice adjoining a transfer chamber. A plurality of treatment chambers can be charged with the semiconductor substrates to be treated from said transfer chamber by first evacuating the transfer chamber and the treatment chamber and then opening the connecting door between the transfer chamber and the treatment chamber. The aim of the invention is to improve this system. To this end, at least one of the treatment chambers is operated at a low pressure or atmospheric pressure and the transfer chamber is flooded with an inert gas before the connecting door associated with the treatment chamber is opened, while a predetermined pressure difference between the transfer chamber and the treatment chamber is maintained.

Method and device for treating semiconductor substrates

The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Device and method for depositing one or more layers on a substrate

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Herzogenrath, Germany

Piotr Strzyzewski