Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Piotr R Lubicki

Russell J Low

Kasegn D Tekletsadik

Eric D Hermanson

Anthony Renau

Saeed Jazebi

Steve Krause

Joseph C Olson

D Jeffrey Lischer

Stephen Krause

Adrian Wilson

Doug E May

Shankar Kodle

Frank Sinclair

Bon-Woong Koo

Peter F Kurunczi

Costel Biloiu

Vikram Singh

Paul J Murphy

Alexandre Likhanskii

Richard John Hertel

Christopher W Campbell

Kevin M Daniels

Klaus Becker

James Paul Buonodono

Klaus Petry

Tyler Burton Rockwell

David J Morrell

Charles L Stanley

Edward W Bell

Semaan Y Fersan

George Emmanuel

Vasu Mogaveera

Douglas E May

An Insulated Core Transformer (ICT) high voltage DC power supply is disclosed. The power supply comprises a plurality of printed circuit boards, each comprising a secondary winding and a voltage doubler circuit. These voltage doubler circuits are arranged in series. The stacked printed circuit boards are surrounded by a plurality of grading rings. The last grading ring is electrically connected to the output voltage. High voltage resistors are then disposed between adjacent grading rings to form a voltage divider. The voltage of the first grading ring may be used as part of a feedback system to regulate the output of the AC power supply. By disposing the high voltage resistors on the grading rings, a more uniform voltage gradient may be created.

System to optimize voltage distribution along high voltage resistor string in ICT high voltage power supply

Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. The fault current limiter may further include a second fault current limiter module electrically connected in series with the secondary winding of the second current splitting device. By splitting the fault current limiter into parts with fault current limiter modules interspersed between the windings, the fault current limiter may be to be built with less insulation between the windings.

Fault current limiter with modular mutual reactor

Embodiments of the disclosure include a fault current limiter (FCL) providing symmetrical electrostatic shielding. In some embodiments, a FCL includes a superconductor maintained at a first voltage greater than zero voltage, and an enclosure containing the superconductor, the enclosure maintained at a second voltage greater than zero voltage, wherein the second voltage is different from the first voltage. The FCL may include an electrical connection directly coupling the superconductor and the enclosure, wherein the electrical connection enables each of a plurality of current limiting modules of the superconductor to receive, during a fault condition, an equal or unequal sub-portion of a total voltage drop.

Fault current limiter providing symmetrical electrostatic shielding

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Radio frequency extraction system for charge neutralized ion beam

A solid-state fault current limiter including a current splitting reactor, comprising a system current input, a passive current output and a control current output. A voltage control reactor includes a first end and a second end, the first end coupled to the control current output and the second end coupled to the passive current output. A fault current trigger circuit coupled in parallel with the voltage control reactor and configured to open when a fault current, received by the system current input, exceeds a predefined trigger current. A transient voltage control circuit coupled in parallel with the voltage control reactor to receive the fault current.

Solid state fault current limiter

A system and method for providing isolated power to the gate driving circuits used in solid state switching devices is disclosed. Rather than using expensive isolated AC/DC power supplies, an isolation transformer is used to provide isolated AC voltage. In one embodiment, the primary winding of the isolation transformer is disposed across an independent AC source. In another embodiment, the primary winding of the isolation transformer is disposed across two phases of the AC power line. Isolated AC voltage is then generated across the secondary winding of the isolation transformer. This isolated AC voltage is then used by a non-isolated DC power supply, which generates the power for the gate driving circuit.

System and method of providing isolated power to gate driving circuits in solid state fault current limiters

Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

Current limiter for high voltage power supply used with ion implantation system

An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

Glitch control during implantation

Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.

Interfacing two insulation parts in high voltage environment

Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.

Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.

Techniques for making high voltage connections

Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.

Techniques for controlling a charged particle beam

Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.

A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

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Peabody, MA, United States of America

Piotr R Lubicki