Topgan Sp. Z O.o.

Instytut Wysokich Cisnien Polskiej Akademii Nauk

Inst. Wysokich Cisnien Polskiej Akademii Nauk

Instytut Wysokich Ciśnień Polskiej Akademi Nauk

Instyut Wysokich Cisnien Polskiej Akademii Nauk

Top-Gan Spolka Z Ograniczona Odpowiedzialnoscia

Piotr Perlin

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Michal Leszczynski

Robert Czernecki

Szymon Stanczyk

Michal Leszczyński

Czeslaw Skierbiszewski

Michal Bockowski

Michal Boćkowski

Marcin Sarzyński

Boleslaw Lucznik

Kafar Anna

Przemyslaw Wiśniewski

Anna Kafar

Marcin Sarzynski

Marcin Siekacz

Anna Nowakowska-Siwinska

Szymon Grzanka

Anna Feduniewicz-Zmuda

Anna Nowakowska-Szkudlarek

Katarzyna Holc

The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0&#xb0; to 10&#xb0;.

AlInGaN-based superluminescent diode

The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

AlInGaN alloy based laser diode

A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.

Substrate for epitaxial growth

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

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Warsaw, Poland

Piotr Perlin