Az Electronic Materials USA Corp.

Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Braggone Oy

PingHung Lu

Weihong Liu

Chunwei Chen

Mark O Neisser

Hengpeng Wu

David J Abdallah

Medhat A Toukhy

Ruzhi Zhang

WooKyu Kim

SookMee Lai

Huirong Yao

Aritaka Hishida

Hong Zhuang

Ralph R Dammel

M Dalil Rahman

Guanyang Lin

Ari Kärkkäinen

Jianhui Shan

Jian Yin

Zhong Xiang

Woo-Kyu Kim

Yoshiharu Sakurai

Zachary Bogusz

Stephen Meyer

Lei Lu

Hisashi Motobayashi

SangChul Kim

Sangchul Kim

Sookmee Lai

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

Positive working photosensitive material

A negative working, aqueous base developable, photosensitive photoresist composition and a process of using this composition to produce lithographic images, where this composition is one comprising: a) a polymer containing the four repeat units of structures (1), (2), (3), and (4), but no other types of repeat units; wherein v, x, y and z, respectively, represent the mole % of each repeat units of structures (1), (2), (3) and (4); b) a radical photo-initiator component, which is comprised of at least one radical photo initiator which is activated by a broad absorption of radiation from about 360 nm to about 440 nm; c) a crosslinker component which is either a mixture consisting of crosslinkers of structure (5), (6) and (7), or a single crosslinker of structure (8); d) a radical inhibitor component; e) an optional surfactant component; f) an optional dissolution promoter component; and g) a solvent. The invention also relates to the process of using this negative resist to produce lithographic images.

Negative-working ultra thick film photoresist

Environmentally stable, chemically amplified (CA) positive resist compositions are described. These resist compositions are based on a blend of at least two types of polymer platforms. The first platform is a low activation energy, acetal blocked polyhydroxystyrene (PHS) based resin; the second platform is an acrylate based resin containing a high activation energy acid labile group [such as tertiary-butyl acrylate(t-BA)]. The resist composition also contains a photo-acid generator (PAG), a base quencher, a surfactant dissolved in a suitable solvent. Also described, is the use of these resist composition in a method for forming a photoresist relief image on a substrate.

Enviromentally stable, thick film, chemically amplified resist

The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R-Rare, independently, &#x2014;H or &#x2014;CH, A is a linear or branched C-Calkylene group, B is a C-Calkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a &#x2014;COOCH&#x2014; group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C-Calkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.

Positive photosensitive material

Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

Negative-working thick film photoresist

The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and/or a hard mask for pattern transfer.

Underlayer composition and process thereof

A polymer comprising a siloxane polymer having at least one Si&#x2014;OH group and at least one Si&#x2014;OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40&#xb0; C. as measured by GPC is provided.

Silicon-based antireflective coating compositions

The present invention relates to a composition comprising: where Ris a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Silicone coating composition

The present invention relates to an antireflective coating composition comprising, (i) a thermal acid generator; (ii) a crosslinkable polymer comprising at least one aromatic group; and, (iii) a polymeric crosslinker comprising at least one unit of structure (6), where Rto Ris independently selected from H, (C-C) alkyl and aromatic group, Rand Rare independently (C-C) alkyl. The invention also relates to a process for imaging the antireflective coating composition of the present invention.

Antireflective coating compositions

The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, The invention further relates to a process for imaging the antireflective coating composition.

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Bridgewater, NJ, United States of America

PingHung Lu