Globalfoundries Singapore Pte. Ltd.

Ping Zheng

Eng Huat Toh

Kiok Boone Elgin Quek

Shyue Seng Tan

Lanxiang Wang

Yuan Sun

Yongshun Sun

Elgin Kiok Boone Quek

Ruchil Kumar Jain

Eric Linardy

Bin Liu

Kazutaka Yamane

Samarth Agarwal

Kien Seen Daniel Chong

Jing Hua Michelle Tng

Francesco Gramuglia

Cancan Wu

Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.

Photodetectors with a deep trench isolation region that includes a bragg mirror

The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to devices containing photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs). The present disclosure may provide a device including a substrate, a first well of a first conductivity type in the substrate, a second well of a second conductivity type in the substrate, and a buried layer of the second conductivity type in the substrate. The buried layer may be below the first well and the second well. The buried layer may have a first section and a second section, in which the first section has a larger thickness than the second section.

Optoelectronic device including photodiode having buried layer with different thicknesses

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.

Single-photon avalanche diodes with deep trench isolation

The present disclosure relates to semiconductor structures and, more particularly, to temperature sensors with programmable magnetic tunnel junction structures and methods of manufacture. A structure includes a resistor material connected in series with a programmable magnetic tunnel junction structure in a Wheatstone bridge configuration.

Programmable magnetic tunnel junction

The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs).

Photodiodes with serpentine shaped electrical junction

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.

Trenchless single-photon avalanche diodes

A magnetic field sensor may include a semiconductor structure having a planar surface, and first, second, and third sensing devices. The semiconductor structure may include a semiconductor member having a two-dimensional electron gas therein, and an insulator member disposed on the semiconductor member. The first sensing device may be configured to sense magnetic field along a first axis parallel to the planar surface. The second sensing device may be configured to sense magnetic field along a second axis parallel to the planar surface, and orthogonal to the first axis. The third sensing device may be configured to sense a magnetic field along a third axis normal to the planar surface. Each of the first, second, and third sensing devices may be formed in the semiconductor structure and may include electrodes that extend from the insulator member to the two-dimensional electron gas.

Magnetic field sensor and methods of fabricating a magnetic field sensor

A semiconductor device may be provided including a first series portion and a second series portion electrically connected in parallel with the first series portion. The first series portion may include a first MTJ stack and a first resistive element electrically connected in series. The second series portion may include a second MTJ stack and a second resistive element electrically connected in series. The first resistive element may include a third MTJ stack and the second resistive element may include a fourth MTJ stack. The first, second, third, and fourth MTJ stacks may include a same number of layers, which may include a fixed layer, a free layer, and a tunnelling barrier layer between the fixed layer and the free layer. Alternatively, the first resistive element may include a first transistor and the second resistive element may include a second transistor.

Tunnel magnetoresistance sensor devices and methods of forming the same

The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.

Hall effect sensors

A Hall effect sensor device may be provided, including one or more sensor structures. Each sensor structure may include: a base layer having a first conductivity type; a Hall plate region having a second conductivity type opposite from the first conductivity type arranged above the base layer; a first isolating region arranged around and adjoining the Hall plate region, and contacting the base layer; a plurality of second isolating regions arranged within the Hall plate region; and a plurality of terminal regions arranged within the Hall plate region. The first and second isolating regions may include electrically insulating material, and each neighboring pair of terminal regions may be electrically isolated from each other by one of the second isolating regions.

Hall effect sensor devices and methods of forming hall effect sensor devices

A sensor device includes a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions respectively. The source regions and drain regions are at least partially disposed within the substrate. The second gate structure includes first and second gate elements, and a resistance region configured to provide a resistance to a second current flow through the second channel region. In use, the first gate structure may receive a solution, and a change in pH in the solution changes a first current flow through the first channel region. In turn, the second current flow through the second channel region changes to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.

Sensor device for detecting a pH change in a solution and a method for forming the sensor device

Structures for a Hall sensor and methods of forming a structure for a Hall sensor. The structure includes a semiconductor body having a top surface and a sloped sidewall defining a Hall surface that intersects the top surface. The structure further includes a well in the semiconductor body and multiple contacts in the semiconductor body. The well has a section positioned in part beneath the top surface and in part beneath the Hall surface. Each contact is coupled to the section of the well beneath the top surface of the semiconductor body.

Hall sensors with a three-dimensional structure

Structures for a sensor and fabrication methods for a sensor. Features each having a top surface and a plurality of side surfaces are formed. A sensing layer is formed on the top surface and the side surfaces of each feature, and an interconnect structure having one or more interlayer dielectric layers is formed over the features. The one or more interlayer dielectric layers include a cavity arranged to expose the sensing layer, and the sensing layer is composed of a material that is sensitive to a property of an analyte solution provided in the cavity.

Sensors with a non-planar sensing structure

Structures for a sensor and methods of forming such structures. A sensing element includes a free magnetic layer, a pinned magnetic layer, and a non-magnetic conductive spacer layer between the free magnetic layer and the pinned magnetic layer. A dummy element is positioned outside of an outer boundary of the sensing element. The dummy element is detached from the sensing element.

Sensors including dummy elements arranged about a sensing element

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a photodetector, where the photodetector includes an impingement photodetector well and a base photodetector well. A transfer transistor overlies the photodetector, where the transfer transistor includes a transfer gate, a source, and a drain. A source contact is electrically connected to the source, and the source contact is also electrically connected to the photodetector.

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Singapore, Singapore

Ping Zheng