Taiwan Semiconductor Manufacturing Comp. Ltd.

Ping-Yuan Chen

Hung-Cheng Chen

Yu-Hsuan Wang

Chih-Hsuan Hsieh

Chyi-Tsong Ni

Wen-Kung Cheng

Chih-Hsua Hsieh

Huai-Te Huang

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

Target structure of physical vapor deposition

In accordance with some embodiments, systems and methods for processing a semiconductor substrate are provided. The method includes loading a semiconductor substrate from a chamber to a transfer module, detecting a center and a notch of the semiconductor substrate by the transfer module, and transferring the semiconductor substrate from the transfer module to a process chamber.

Systems and method for transferring a semiconductor substrate

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Hsinchu, Taiwan

Ping-Yuan Chen