Ii-vi Incorporated

Agere Systems Inc.

Agere Systems Guardian Corp.

Ii-vi Delaware, Inc.

Ping Wu

Ilya Zwieback

Avinash K Gupta

Thomas E Anderson

Gary E Ruland

Varatharajan Rengarajan

Xueping Xu

Andrew E Souzis

Utpal Kumar Chakrabarti

Edward Semenas

Kevin Cyrus Robinson

Biswanath Roy

Bora M Onat

Donovan L Barrett

Jihong John Chen

Avinesh K Gupta

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.

Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Large diameter, high quality SiC single crystals, method and apparatus

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.

Method for synthesizing ultrahigh-purity silicon carbide

In a crystal growth method, a seed crystaland a source materialare provided in spaced relation inside of a growth crucible. Starting conditions for the growth of a crystalin the growth crucibleare then established therein. The starting conditions include: a suitable gas inside the growth crucible, a suitable pressure of the gas inside the growth crucible, and a suitable temperature in the growth cruciblethat causes the source materialto sublimate and be transported via a temperature gradient in the growth crucibleto the seed crystalwhere the sublimated source material precipitates. During growth of the crystalinside the growth crucible, at least one of the following growth conditions are intermittently changed inside the growth cruciblea plurality of times: the gas in the growth crucible, the pressure of the gas in the growth crucible, and the temperature in the growth crucible

SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique

A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

Fabrication of SiC substrates with low warp and bow

The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.

Semiconductor device and method of fabrication

Semiconductor devices which utilize low K dielectrics

Growing community of inventors

Warren, NJ, United States of America

Ping Wu