Suzhou Poweron Ic Design Co., Ltd.

Wuxi Chipown Microelectronics Co., Ltd.

Wuxi Chipown Micro-electronics Limited

Ping Tao

Haisong Li

Yangbo Yi

Changshen Zhao

Lixin Zhang

Wei Gao

Haijun Zhou

Wenliang Liu

Qin Wang

Hongxing Li

Wengao Chen

A power supply control circuit for a switch mode power supply converter, and a power supply control method using the control circuit. The control circuit includes an auxiliary boosting unit, a main control unit and an auxiliary winding unit. The main control unit is configured to control the power switch in a power stage circuit to turn on or to be off, and to supply power to the auxiliary boosting unit. The auxiliary boosting unit is configured to provide auxiliary power for the main control unit, and to self-adaptively adjust the auxiliary boosting unit's own average switching frequency based on a load state of the main control unit. The auxiliary winding unit is configured to couple energy by means of a magnetic element in the power stage circuit, to generate an output voltage.

Power supply control circuit for switch mode power supply converter and power supply control method using the same

A circuit for controlling a switching power supply and a method for controlling a switching power supply by using the circuit for controlling the switching power supply, the circuit for controlling a switching power supply is configured to control a power stage circuit of a converter of the switching power supply. The circuit for controlling the switching power supply includes an external magnetic field direct detection unit, a current limit threshold unit, an operating frequency unit, a pulse width unit and a logic unit. The external magnetic field direct detection unit includes a Hall device and a Hall detection component. In accordance with the circuit for controlling the switching power supply of the present disclosure, the intensity of the external magnetic field can be detected directly at the chip level, and the operating mode of the switching power supply system can be adjusted timely.

Circuit for controlling switching power supply by current limiting and magnetic field detection, and method for controlling switching power supply by using circuit

A switching power supply is provided which includes: an output port; a transformer; a first voltage divider circuit, configured to divide a feedback voltage to obtain a first divided voltage; and a primary controller, configured to control a current of the primary winding of the transformer; where the primary controller includes: a first comparison module, configured to compare the first divided voltage with a first reference voltage to obtain a first comparison result; a second comparison module, configured to compare the power supply voltage with a second reference voltage to obtain a second comparison result; and an open circuit protection module, configured to generate an open circuit protection signal, where the primary controller is configured to stop control of the primary winding in response to the open circuit protection signal. The present disclosure can efficiently detect disconnection of the up-sampling resistor of the switching power supply and provide open-circuit protection.

Switching power supply

The present disclosure relates to a circuit structure for enhancing EFT immunity of primary side converter, including a power ground and a feedback voltage detecting block, a feedback current detecting block, a controller, a PWM driving block, a high voltage starting block, a starting unit, a circuit for enhancing EFT immunity of primary side converter, a power MOS transistor, and an OR gate configured to perform a logical OR of an off-time calculated theoretically and an off-time output by an off-time control block. The present disclosure enhances EFT immunity effectively and improves the dynamic characteristics of the primary side converter.

Circuit structure for enhancing EFT immunity of primary side converter

A high voltage start-up circuit with adjustable start-up time, wherein, the drain electrode of the first NMOS transistor is connected with a first terminal of the first resistor, a gate electrode of the second NMOS transistor and a negative terminal of the diode; a source electrode of the first NMOS transistor, together with a positive terminal of the diode, is connected to the power ground; a drain electrode of the second NMOS transistor, together with a second terminal of the first resistor, is connected with a port SW of a chip; a source electrode of the second NMOS transistor, together with a first terminal of the second resistor, is connected with a power port VDD of the chip. The circuit can adjust the start-up time and the restart time of the chip flexibly.

High voltage start-up circuit with adjustable start-up time

A semiconductor device with a current sampler and a start-up structure, comprises first, second and third high-voltage transistors, and a resistor, wherein: a drain terminal of the first transistor is respectively connected to a drain terminal of the second transistor, a drain terminal of the third transistor and one end of the resistor; a source terminal of the first transistor is grounded, and a gate terminal of the first transistor is connected to a gate terminal of the second transistor; the other end of the resistor is connected to a gate terminal of the third transistor; wherein the resistor is wound and formed in a common voltage withstand region of the first transistor, the second transistor and the third transistor, or in a voltage withstand region of the first transistor only, or in the voltage withstand region of the third transistor only.

Semiconductor device with a current sampler and a start-up structure

A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.

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Jiangsu, China

Ping Tao