Intel Corporation

Exo Imaging, Inc.

Ping Ping Ooi

Jackson Chung Peng Kong

Bok Eng Cheah

Kooi Chi Ooi

Eng Huat Goh

Mooi Ling Chang

Wen Wei Lum

Khang Choong Yong

Wee Hoe

Telesphor Kamgaing

Jenny Shio Yin Ong

Seok Ling Lim

Chang-Tsung Fu

Chan Kim Lee

Min Suet Lim

Shanggar Periaman

Poh Tat Oh

Fern Nee Tan

Khai Ern See

Jenn Chuan Cheng

Teong Keat Beh

Chung Peng Jackson Kong

Jimmy Huat Since Huang

Chu Aun Lim

Damien Weng Kong Chong

Chung Peng (Jackson) Kong

Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Composite bridge die-to-die interconnects for integrated-circuit packages

Methods and apparatus relating to integrating System in Package (SiP) with Input/Output (IO) board for platform miniaturization are described. In an embodiment, a SiP board includes a plurality of logic components. An IO board is coupled to the SiP board via a grid array. The plurality of logic components is provided on both sides of the SiP board and one or more of the plurality of logic components are to positioned in an opening in the IO board. Other embodiments are also disclosed and claimed.

Integrating system in package (SiP) with input/output (IO) board for platform miniaturization

An electronic circuit including a substrate having a first dielectric characteristic. The substrate can include a first side and a second side. An intermediary material can be disposed within the substrate. For instance, the intermediary material can be located between the first side and the second side. The intermediary material can include a second dielectric characteristic, where the second dielectric characteristic is different than the first dielectric characteristic. A first conductive layer can be disposed on the first side, and a second conductive layer can be disposed on the second side. A conductive path can be electrically coupled between the first conductive layer and the second conductive layer. The conductive path can be in contact with at least a portion of the intermediary material.

Substrate with gradiated dielectric for reducing impedance mismatch

A device and method of utilizing conductive thread interconnect cores. Substrates using conductive thread interconnect cores are shown. Methods of creating a conductive thread interconnect core are shown.

Interconnect core

A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Packaged die stacks with stacked capacitors and methods of assembling same

Over-molded IC package assemblies including an in-mold capacitor. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more capacitors are fabricated within the molding compound. The capacitors may include two or more metal plates separated by an intervening dielectric material, all of which are embedded within a trench in the molding compound. Individual ones of the capacitor plates may physically contact a conductive land of the package redistribution layer or package substrate, for example to tie the plates to a ground plane and power plane, or two supply rails, in a decoupling capacitor application.

Over-molded IC package with in-mold capacitor

A multi-conductor interconnect for a microelectronic device incorporates multiple conductors and integrated shielding for the conductors. The multi-conductor interconnect includes first and second groups of conductors interleaved with one another within a dielectric structure. One of the groups of conductors may be coupled to a reference voltage node to provide shielding for the other group of conductors. The multi-conductor interconnect may further include a shield layer extending over some portion, or all, of the conductors of the first and second groups.

Multi-conductor interconnect structure for a microelectronic device

Discussed generally herein are devices that can include multiple stacked dice electrically coupled to dice electrically coupled to a peripheral sidewall of the stacked dice and/or a dice stack electrically coupled to a passive die. In one or more embodiments a device can include a dice stack comprising at least two dice including a first die and a second die, the first die electrically connected to and on a second die, a first side pad on, or at least partially in, a first sidewall of the dice stack, a third die electrically connected to the first die at a first surface of the third die and through the first side pad, and a fourth die electrically connected to the third die at a second surface of the first die, the second side opposite the first side.

Stacked dice systems

Over-molded IC package assemblies including an embedded voltage reference plane and/or heat spreader. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more conductive layers are embedded within the molding compound. The conductive layers may include an interior portion located over the IC chip and a peripheral portion located over the redistribution layers or package substrate. The interior portion may comprise one or more heat conductive features, which may physically contact a surface of the IC chip. In some further embodiments, the peripheral portion comprises one or more electrically conductive features, which may physically contact a surface of the package redistribution layers or package substrate to convey a reference voltage. One or more conductive traces may connect the conductive features in the interior with conductive features in the periphery.

Over-molded IC packages with embedded voltage reference plane and heater spreader

Embodiments of the present disclosure are directed toward a stacked package assembly for embedded dies and associated techniques and configurations. In one embodiment, stacked package assembly may comprise a first die package and a second die package stacked one upon the other with plural interconnections between them; and a voltage reference plane embedded in at least one of the first and second die packages in proximity and generally parallel to the other of the first and second die packages.

Growing community of inventors

Butterworth, Malaysia

Ping Ping Ooi