Memsensing Microsystems (suzhou, China) Co., Ltd.

Memsensing Microsystems Technology Co., Ltd

Ping Lv

Wei Hu

Gang Li

Jia-Xin Mei

Bin Xiao

Disclosed are a bulk acoustic wave resonator and a fabrication method for the bulk acoustic wave resonator. The fabrication method includes: preparing a cavity with a top opening on a first silicon wafer; preparing an insulating layer on an upper surface of a second silicon wafer, and preparing a resonant piezoelectric stack on an upper surface of the insulating layer; preparing a first silicon dioxide layer on an upper surface of the resonant piezoelectric stack; bonding a surface where the top opening of the cavity is located with an upper surface of the first silicon dioxide layer; and preparing a lead out pad of the first electrode and the second electrode.

Bulk acoustic wave resonator and fabrication method for the bulk acoustic wave resonator

A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.

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Suzhou, China

Ping Lv