University of Electronic Science and Technology of China

Other

Huawei Device Co., Ltd.

Southwest Petroleum University

Ping Li

Yongbo Liao

Yan Chen

Yaosen Li

Zhaoxi Hu

Fan Lin

Ke Feng

Chenxi Peng

Xianghe Zeng

Yong Fan

Wei Zhu

Yang Wang

Xiangchao Shi

Gang Zhang

Yuan Zhong

Zufeng Guo

Tao He

Yuming Wang

Hu Deng

Lianwen Qi

Junhong Li

Yuehao Liu

Ruifeng Tang

Jiarui Zou

Ruihong Nie

Conglong Xie

Xuanlin Xiong

Rongzhou Zeng

Yuchuan An

Yu Yi

Qingwei Zhang

Yangbing Li

Ming Xian

Xia Li

Zhicheng Li

Gaocheng Feng

A method for predicting and optimizing an ROP for oil and gas drilling based on Bayesian optimization includes: acquiring raw drilling data according to a preset sampling period, constructing an initial sample data set based on the raw drilling data, constructing an ROP prediction model based on the initial sample data set, and predicting an ROP at a next sample point through a Gaussian process regression based on the ROP prediction model. The present invention realizes rapid analysis of historical drilling data and accurate prediction of an ROP range at a sample point in a feasible domain. The method can obtain an optimized ROP and an optimized engineering parameter through Bayesian optimization, and obtain an engineering parameter corresponding to an optimal ROP. The method has few restrictions on the drilling engineering parameter and the raw formation parameter, improves prediction accuracy, and avoids the problem of blurred parameter value boundaries.

Method for predicting and optimizing rate of penetration (ROP) for oil and gas drilling based on bayesian optimization

A nano-wall integrated circuit structure with high integration density is disclosed, which relates to the fields of microelectronic technology and integrated circuits (IC). Based on the different device physical principles with MOSFETs in traditional ICs, the nano-wall integrated circuit unit structure (Nano-Wall FET, referred to as NWaFET) with high integration density can improve the integration of the IC, significantly shorten the channel length, improve the flexibility of the device channel width-to-length ratio adjustment, and save chip area.

Nano-wall integrated circuit structure with high integrated density

A MOS integrated circuit basic unit includes: a drain semiconductor region; a lightly doped drain region; a channel semiconductor region; a source semiconductor region; a source electrode; a gate electrode; a gate dielectric layer; and a drain electrode. The drain semiconductor region is the bottom of the basic unit. The gate electrode has a ring structure, which surrounds the channel semiconductor region, the source semiconductor region and the lightly doped drain region. The upper surface of the gate electrode is aligned to the upper surface of the source semiconductor region; and a bottom surface of the gate electrode is lower than an interface of the lightly doped drain region and the drain semiconductor region. The gate dielectric layer is disposed between the gate electrode and the adjacent functional layer. The drain semiconductor region is connected to the drain electrode of the basic unit.

Metal oxide semiconductor integrated circuit basic unit

The methods of gate extraction and injection FET and channel carrier quantity control related to microelectronics technology and semiconductor technology. The gate extraction and injection FET of the invention is provided with a source, a drain, a gate and a channel semiconductor area on the insulating layer. A gate dielectric layer is arranged between the gate and the channel semiconductor region, wherein, the gate dielectric layer is a thin film material with resistance values of 10-10&#x3a9; and the channel semiconductor region is a two-dimensional semiconductor or a three-dimensional semiconductor with two-dimensional semiconductor material characteristics (1-10 cellular crystal layers). The advantages of the invention are that the power consumptions of the devices and the integrated circuits can be greatly reduced by a few orders of magnitude.

Gate extraction and injection field effect transistors and method for controlling its channel carrier amount

This application discloses a method of differentiating stable angina pectoris from acute coronary syndrome, including: obtaining a blood plasma sample from a patient; measuring a relative concentration of at least one metabolic biomarker in the blood plasma sample, wherein the at least one metabolic biomarker is selected from the group consisting of malic acid, taurine, arachidonic acid, citramalic acid, methionine, and pentadecanoic acid; calculating a value according to the relative concentration of at least one metabolic biomarker; comparing the value with a predefined critical value, if the value is more than the predefined critical value, the patient has the acute coronary syndrome, otherwise, the patient has the stable angina pectoris. The method and a diagnostic kit thereof is capable of differential diagnosis of SA and ACS and it can improve the diagnostic convenience and promote the diagnostic standardization.

Method of differentiating stable angina pectoris from acute coronary syndrome and diagnostic kit thereof

It discloses a dish sending device for restaurant, comprising: a suspended guide rail, traveling trolley provided on the guide rail, lifting mechanism provided on the travelling trolley; a dish container connection device is provided at the lower end of the lifting mechanism; a trolley sliding contact line is provided on the guide rail, and the travelling trolley is provided with a carbon brush for contact with the trolley sliding contact line.

Dish conveying device used in catering store

Provided is a lateral power device having low specific ON-resistance and using a high-dielectric constant socket structure and a manufacturing method therefor, which relate to semiconductor power devices. A source electrode () of the device is of a first conduction type, and a channel region (), a silicon substrate () and an ohmic contact heavily-doped region are of a second conduction type; at least two isolation regions are arranged in an embedded manner in a drift region (); between the isolation regions are the drift region () and the channel region (); each isolation region extends from the source electrode () to a drain electrode (); high-dielectric constant material strips () and first insulation dielectric layers () form boundaries of the bottoms and sidewalls of the isolation regions; the isolation regions are filled with a first filling material (), a second insulation dielectric layer () is arranged on the upper surface of the drift region () and the upper surfaces of the isolation regions, and a gate electrode () directly contacts the first filling material () via holes on the second insulation dielectric layer (); and a source electrode lead-out wire () and a drain electrode lead-out wire () directly contact the source electrode () and the drain electrode () respectively via the holes on the second insulation dielectric layer (). The area of a power device can be greatly reduced on the premise of not reducing the withstand voltage and not increasing the specific ON-resistance.

Lateral power device having low specific on-resistance and using high-dielectric constant socket structure and manufacturing method therefor

A voltage driving apparatus () for a power amplifier, a power amplifying system, a power supply device and a communication device are disclosed. The voltage driving apparatus () for the power amplifier includes a voltage input module (), a voltage output module (), a signal input module (), and a control module (). The voltage output module () is connected to the power amplifier to provide a voltage. The signal input module () is configured to receive a variable input electric signal. The control module () is electrically connected to the voltage input module (), the voltage output module (), and the signal input module () and configured to dynamically adjust the output voltage of the voltage output module () according to the variable input electric signal received by the signal input module ().

Voltage driving apparatus for power amplifier, power amplifying system, power supply device and communication device

Growing community of inventors

Chengdu, China

Ping Li