Taiwan Semiconductor Manufacturing Comp. Ltd.

Ping-Jung Wu

Chen-Hua Douglas Yu

Wen-Chih Chiou

Yu-Kuang Liao

Tsang-Jiuh Wu

Fang-Cheng Chen

Cheng-Chun Tsai

Jia-Xsing Li

Ken-Yu Chang

Hao-Wen Ko

A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

Semiconductor device and manufacturing method thereof having grating coupled dies and nanostructures

A method includes bonding a top die to a bottom die, depositing a first dielectric liner on the top die, and depositing a gap-fill layer on the first dielectric liner. The gap-fill layer has a first thermal conductivity value higher than a second thermal conductivity value of silicon oxide. The method further includes etching the gap-fill layer and the first dielectric liner to form a through-opening, wherein a metal pad in the bottom die is exposed to the through-opening, depositing a second dielectric liner lining the through-opening, filling the through-opening with a conductive material to form a through-via connecting to the metal pad, and forming a redistribution structure over and electrically connecting to the top die and the through-via.

3DIC with gap-fill structures and the method of manufacturing the same

A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.

Semiconductor package

Semiconductor device and manufacturing method thereof

Semiconductor device with nanostructures aligned with grating coupler and manufacturing method thereof

A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.

Package structure and manufacturing method thereof

A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The second optical transceiver is stacked on the first optical transceiver. The third optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The third optical transceiver is stacked on the second optical transceiver. The plasmonic waveguide penetrates through the second optical transceiver and optically couples the at least one optical input/output portion of the first optical transceiver and the at least one optical input/output portion of the third optical transceiver.

An optical transceiver including a photonic integrated circuit component, an electric integrated circuit component and an insulating encapsulant is provided. The photonic integrated circuit component includes at least one optical input/output portion configured to transmit and receive optical signal. The electric integrated circuit component is disposed on and electrically connected to the photonic integrated circuit component. The insulating encapsulant covers the at least one optical input/output portion of the photonic integrated circuit component. The insulating encapsulant laterally encapsulates the electric integrated circuit component. The insulating encapsulant is optically transparent to the optical signal.

Growing community of inventors

Hsinchu, Taiwan

Ping-Jung Wu