Clariant Finance (bvi) Limited

Az Electronic Materials USA Corp.

Hoechst Celanese Corporation

Merck Patent Gmbh

Taiwan Semiconductor Manufacturing Comp. Ltd.

Az Electronic Materials (luxembourg) S.a.r.l.

Ormet Circuits, Inc.

Clariant Finance Lmited

Ping-Hung Lu

M Dalil Rahman

Ralph R Dammel

Dana L Durham

Dinesh N Khanna

Chunwei Chen

Shuji Ding

Iain McCulloch

Mark O Neisser

Medhat A Toukhy

Weihong Liu

Hong Zhuang

Michelle M Cook

Joseph E Oberlander

Douglas S McKenzie

Jianhui Shan

Ruzhi Zhang

Anthony J Corso

Francis Michael Houlihan

Hengpeng Wu

Jian-Hong Chen

Stanley F Wanat

Huirong Yao

Yusuke Takano

Jian Yin

Ming Kang

Walter Spiess

David J Abdallah

Daniel P Aubin

Bang-Chein Ho

Salem K Mullen

Catherine A Shearer

Sunit S Dixit

Zhong Xiang

Aritaka Hishida

SookMee Lai

Robert R Plass

WooKyu Kim

Stanley A Ficner

Anthony Canize

Elaine G Kokinda

Allen G Timko

Yoshiharu Sakurai

Stanely F Wanat

Kathryn H Jensen

Pingyong Xu

Douglas Mckenzie

The present invention relates to electrical interconnect structures formed from a lithographically defined polymer coating in conjunction with a conductive paste, and methods for forming same.

Lithographically defined electrical interconnects from conductive pastes

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 &#x212b;/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.

DNQ-type photoresist composition including alkali-soluble acrylic resins

A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) The present invention also encompasses a process comprising steps a'), b&#x2032;) c&#x2032;) and d&#x2032;)

Negative-working photoresist compositions for laser ablation and use thereof

Disclosed herein is a photosensitive composition comprising a heterocyclic thiol compound or tautomeric form thereof and its method of use on a substrate, which may include a chalcophile substrate.

Positive working photosensitive material

The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.

Stripper for coating layer

The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Antireflective coating composition comprising fused aromatic rings

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.

Nanocomposite photoresist composition for imaging thick films

The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.

Photoresist composition for imaging thick films

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.

Nanocomposite photosensitive composition and use thereof

In accordance with the objectives of the invention a new water soluble negative photoresist is provided for packing-and-unpacking (PAU) processing steps.

Water soluble negative tone photoresist

A composition that comprises a photopolymerizable compound containing at least two pendant unsaturated groups; at least one ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic monomer; at least one nonionic surfactant; and at least one photoinitiator is provided. The composition also preferably contains at least one amine modified acrylic oligomer and a dye. Other conventional photoresist components such as photosensitizers, adhesion promoters, leveling agents and solvents may also be included in the composition. Such compositions are useful for forming a pattern on a substrate, such as patterning microlithographic circuits on a substrate.

Photosensitive composition and use thereof

The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Negative-acting aqueous photoresist composition

Negative-acting chemically amplified photoresist composition

A photoresist composition comprising a film forming resin obtained by condensing a phenol derivative and a substituted diphenyl ether, a photoactive compound, and a solvent. The photoresist composition may also contain an alkali-soluble, film-forming resin, such as a novolak resin. The photoresist of the instant invention improves the photospeed, resolution and thermal stability of the photoresist images.

Photoresist composition containing a novel polymer

The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.

Fractionated novolak resin from cresol-formaldehyde reaction mixture and

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Bridgewater, NJ, United States of America

Ping-Hung Lu