Average Co-Inventor Count = 4.25
ph-index = 6
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Alpha & Omega Semiconductor Corporation (23 from 749 patents)
2. Clear Creek Bio, Inc. (4 from 4 patents)
3. Shanghai Jiaotong University (3 from 366 patents)
4. L'oreal (2 from 5,066 patents)
5. Alcatel Lucent (2 from 5,032 patents)
6. Intel Corporation (1 from 54,664 patents)
7. Alpha and Omega Semiconductor (cayman) Ltd. (1 from 132 patents)
8. Espressif Systems (shanghai) Co., Ltd. (1 from 39 patents)
9. Impact Therapeutics, Inc. (1 from 11 patents)
10. Academy of Forensic Science (1 from 1 patent)
39 patents:
1. 12144880 - Cosmetic composition for the oxidative dyeing of keratin fibres
2. 12076315 - Stable polymorphic compositions of brequinar sodium and methods of use and manufacture thereof
3. 12012383 - Compositions and methods for inhibiting dihydroorotate dehydrogenase
4. 12002209 - Diabetes detection device and method for forensic identification
5. 11752082 - Cosmetic composition for the oxidative dyeing of keratin fibres
6. 11330544 - Method and device for automatically calibrating wireless frequency offsets
7. 11230528 - Compositions and methods for inhibiting dihydroorotate dehydrogenase
8. 10960078 - Amphiphilic drug-drug conjugates for cancer therapy, compositions and methods of preparation and uses thereof
9. 10889548 - Compositions and methods for inhibiting dihydroorotate dehydrogenase
10. 10581971 - Method, apparatus and system for exchanging sensor information with middleware
11. 10573762 - Vertical gallium nitride Schottky diode
12. 10562889 - Process for the preparation of 1-(arylmethyl)quinazoline-2,4(1H,3H)-diones
13. 10463743 - Amphiphilic drug-drug conjugates for cancer therapy, compositions and methods of preparation and uses thereof
14. 10333006 - Termination structure for gallium nitride Schottky diode including junction barriar diodes
15. 10038106 - Termination structure for gallium nitride Schottky diode