Shanghai Huali Integrated Circuit Mfg. Co., Ltd.

Ping-Hsun Su

The present invention provides an analysis method for a semiconductor device for analyzing a plurality of electrical parameters of a HKMG fin field effect transistor and a plurality of process parameters for manufacturing the transistor, comprising: performing key process parameter correlation analysis for each electrical parameter, wherein the key process parameter correlation analysis comprises: constructing multiple electrical-process models of the electrical parameter corresponding to each process parameter respectively; performing sensitivity analysis for each of the electrical-process models; determining a plurality of key process parameters from the plurality of process parameters based on the obtained sensitivity analysis results of the electrical-process models; and determining a relationship between the electrical parameter and the plurality of key process parameters based on a knowledge database. According to the analysis method provided by the present invention, the process variation which truly causes the transistor's electrical characteristics to change is excavated through the expert system.

Analysis method for semiconductor device

The present disclosure provides an analysis method for a semiconductor device for analyzing a plurality of process parameters for manufacturing a HKMG fin field effect transistor. The analysis method specifically includes: establishing a plurality of process parameter models by grouping the plurality of process parameters in pairs; performing sensitivity analysis on each of the process parameter models; extracting a plurality of key process parameter models from the plurality of process parameter models based on the results of the sensitivity analysis; and performing data mining on the plurality of key process parameter models to determine a plurality of key process parameters and their correlations among the plurality of key process parameters. According to the analysis method provided by the present disclosure, related process parameters are highlighted by data mining and grouping, and the source of process parameter changes is explained. It is possible to adjust the process.

The present disclosure provides an analysis method of a semiconductor device, and the semiconductor device comprises a plurality of HKMG fin field effect transistors and a wafer on which the plurality of HKMG fin field effect transistors are located, and the analysis method comprises: performing acceptance testing on the wafer to be tested; constructing an N-type model based on the position of each N-type transistor at the surface of the wafer to be tested and the corresponding acceptance test result, constructing a P-type model based on the position of each P-type transistor at the surface of the wafer to be tested and the corresponding acceptance test result, and constructing an N/P ratio model corresponding to the surface of the wafer to be tested based on the N-type model and the P-type model; and identifying the N/P ratio model based on a preset standard wafer model to determine whether the wafer to be tested is compliant based on the N/P ratio model. According to the analysis method provided by the present disclosure, it is possible to find a non-compliant wafer among a plurality of wafers, thereby enabling the subsequent targeted parameter analysis and improving the efficiency of optimizing the process scheme.

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Shanghai, China

Ping-Hsun Su