Advanced Semiconductor Engineering, Inc.

Ping-Cheng Hu

Pao-Huei Chang Chien

Po-Shing Chiang

Yu-Fang Tsai

Chien-Wen Chen

Wei-Lun Cheng

Hsu-Yang Lee

Tsung-Yueh Tsai

Yi-Shao Lai

Hsiao-Chuan Chang

Yen-Ting Kuo

Lin-Wang Yu

Che-Chin Chang

Light-emitting semiconductor packages and related methods. The light-emitting semiconductor package includes a central barrier, a plurality of leads, a light-emitting device, a first encapsulant, a package body, and a second encapsulant. The light-emitting device is disposed in the interior space defined by the central barrier and is electrically connected to the leads surrounding the central barrier. The light-emitting device includes upper and lower light-emitting surfaces. The first encapsulant and the second encapsulant cover the upper and lower light-emitting surfaces, respectively. The package body encapsulates portions of the central barrier, portions of each of the leads, and the first encapsulant. The light-emitting semiconductor package can emit light from both the upper and lower sides thereof.

Light-emitting semiconductor packages and related methods

Electronic devices including a semiconductor device package, a substrate, and first and second solder joints. The semiconductor device package includes a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed at least a side surface of each enhancement element. Side surfaces of the enhancement elements and the package body are coplanar. The substrate includes first pads corresponding to the leads and second pads corresponding to the enhancement elements. The first solder joints are disposed between the first pads and the leads. The second solder joints are disposed between the second pads and the enhancement elements. The second solder joints contact side surfaces of the enhancement elements. The surface area of the second pads is greater than the surface area of the corresponding enhancement elements.

Semiconductor device packages with solder joint enhancement elements

A semiconductor package with a die pad, a die disposed on the die pad, and a first lead disposed about the die pad. The first lead includes a contact element, an extension element extending substantially in the direction of the die pad, and a concave surface disposed between the contact element and the extension element. A second lead having a concave surface is also disposed about the die pad. The first lead concave surface is opposite in direction to the second lead concave surface.

Semiconductor packages with lead extensions and related methods

A semiconductor device package including a substrate, first and second solder joints, a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed at least a side surface of each enhancement element. Side surfaces of the enhancement elements and the package body are coplanar. The substrate includes first pads corresponding to the leads and second pads corresponding to the enhancement elements. The first solder joints are disposed between the first pads and the leads. The second solder joints are disposed between the second pads and the enhancement elements. The second solder joints contact side surfaces of the enhancement elements. The surface area of the second pads is greater than the surface area of the corresponding enhancement elements.

Semiconductor device packages with solder joint enhancement element and related methods

A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, a plurality of leads, a chip, and a package body. The die pad includes: (1) a peripheral edge region defining, a cavity with a cavity bottom including a central portion; (2) an upper sloped portion; and (3) a lower sloped portion. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the central portion of the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body.

Semiconductor package having a cavity structure

The advanced quad flat non-leaded package structure includes a carrier, a chip, a plurality of wires, and a molding compound. The carrier includes a die pad and a plurality of leads. The leads include first leads disposed around the die pad, second leads disposed around the first leads and at least an embedded lead portion between the first leads and the second leads. The wires are disposed between the chip, the first leads and the embedded lead portion. The advanced quad flat non-leaded package structures designed with the embedded lead portion can provide better electrical connection.

Advanced quad flat non-leaded package structure and manufacturing method thereof

The manufacturing method of advanced quad flat non-leaded packages includes performing a pre-cutting process prior to the backside etching process for defining the contact terminals. The pre-cutting process ensures the isolation of individual contact terminals and improves the package reliability.

Manufacturing method of advanced quad flat non-leaded package

A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, a first plurality of leads disposed in a lead placement area around the die pad, a second plurality of leads disposed in corner regions of the lead placement area, a semiconductor chip on the die pad and coupled to each lead, and a package body. Each lead includes an upper sloped portion and a lower sloped portion. An average of surface areas of lower surfaces of each of the second plurality of leads is at least twice as large as an average of surface areas of lower surfaces of each of the first plurality of leads. The package body substantially covers the upper sloped portions of the leads. The lower sloped portions of the leads at least partially extend outwardly from a lower surface of the package body.

Advanced quad flat no lead chip package having marking and corner lead features and manufacturing methods thereof

A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, multiple leads, a chip, a package body, and a protective layer. The die pad includes an upper sloped portion, a lower sloped portion, and a peripheral edge region defining a cavity with a cavity bottom. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body. The protective layer substantially covers the lower sloped portion and the lower surface of at least one lead.

Advanced quad flat no lead chip package having a protective layer to enhance surface mounting and manufacturing methods thereof

The advanced quad flat non-leaded package structure includes a carrier having a die pad and a plurality of leads, at least a chip, a plurality of wires, and a molding compound. The rough surface of the carrier enhances the adhesion between the carrier and the surrounding molding compound.

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Kaohsiung, Taiwan

Ping-Cheng Hu