Motorola Corporation

Paragon Optical, Inc.

Ping-chang Lue

Henry G Hughes

Margaret Leslie Kniffin

Donald J Ratkowski

Frederick J Robinson

Marilyn J Stuckey

Paul William Dryer

Herng-Der Chiou

Michael J Davison

Rita Prasad Subrahmanyan

Terry Andrew Willett

Patrick P Dao

Margret L Kniffin

A sensor (,) includes a cavity (,) formed by a substrate (,), an adhesive (,), and a filter (,). A sensing element (,) is located inside the cavity (,) while electrical contacts (,) coupled to the sensing element (,) are located outside the cavity (,). The filter (,) protects the sensing element (,) from physical damage and contamination during die singulation and other assembly processes. The filter (,) also improves the chemical sensitivity, selectivity, response times, and refresh times of the sensing element (,).

Sensor and method of fabrication

A spin-on dielectric for use in manufacturing semiconductors is produced. The dielectric is a siloxane polymer wherein each silicon atom is bonded to a polarization reducing group, and to three oxygen atoms each of which is bonded to one other silicon atom.

Spin-on dielectric formation process for use in manufacturing semiconductors

Trench structures (12,32,35,46) are formed in single crystal silicon substrates (10,30) that have either a (110) or (112) orientation. A selective wet etch solution is used that removes only the exposed portions of the single crystal silicon substrates (10,30) that are in the (110) or (112) crystal planes. The trench structures (12,32,35,46) are defined by the {111} crystal planes in the single crystal silicon substrate (10,30) that are exposed during the selective wet etch process. Trench structures (32,35) can be formed on both sides of a single crystal silicon substrate (30) to form an opening (34). Opening (34) can be used as an alignment mark to align front side processing to backside and vice versa. Trench structures can also be use to form a microstructure (41,61) for a sensor (40,60).

Method of etching a trench into a semiconductor substrate

A sacrificial oxide etching solution of carboxylic acid and HF having a high etch selectivity for silicon oxide relative to polysilicon, metal, and nitride. The solution is useful in the fabrication of microstructures having integrated electronics on the same chip. A carboxylic acid anhydride can be added to this solution to substantially remove all free water so that the etch selectivity to metal is improved. One specific solution is formed by mixing acetic acid, acetic anhydride, and aqueous HF.

Carboxylic acid etching solution and method

A sensor (10) includes a cavity (31) formed by a substrate (11), an adhesive (21), and a filter (22). A sensing element (14) is located inside the cavity (31) while electrical contacts (17, 18) coupled to the sensing element (14) are located outside the cavity (31). The filter (22) protects the sensing element (14) from physical damage and contamination during die singulation and other assembly processes. The filter (22) also improves the chemical sensitivity, selectivity, response times, and refresh times of the sensing element (14).

A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14') . The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18') .

Method of making a semiconductor device having a low permittivity

A semicondutor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18, 18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18, 18').

Semiconductor device having a low permittivity dielectric

A method of anisotropically etching single crystal silicon includes providing single crystal silicon to be etched and placing it in an etching solution consisting essentially of R.sub.4 NOH and solvent wherein R is an alkyl group having between 0 and 4 carbon atoms. The solution will preferentially etch &lt;100&gt; or &lt;110&gt; oriented single crystal silicon. Additionally, electrochemical etching may be employed to preferentially etch P type single crystal silicon.

Anisotropic single crystal silicon etching solution and method

A copolymer composition, especially adapted for use in fabricating a contact lens comprises a copolymer of comonomers which include about 1-95 parts by weight of hydroxy silane esters of acrylic or methacrylic acid having a silanol functionality of 10-20% and about 99-5 parts by weight of a C.sub.1 -C.sub.20 alkyl ester of acrylic or methacrylic acid. Contact lenses and contact lens buttons are formed of such copolymer by conventional techniques and also by injection molding and by compression molding.

Silane ester contact lens composition, article and method of manufacture

A copolymer composition, specially adapted for use in fabricating a contact lens comprises a copolymer of comonomers which include about 1-95 parts by weight of hydroxy silane esters of acrylic or methacrylic acid and about 99-5 parts by weight of a C.sub.1 -C.sub.20 alkanol ester of acrylic or methacrylic acid. Contact lenses and contact lens blanks are formed of such copolymer by conventional techniques and also by injection molding.

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Scottsdale, AZ, United States of America

Ping-chang Lue