Taiwan Semiconductor Manufacturing Comp. Ltd.

Pin-Dai Sue

Hui-Zhong Zhuang

Li-Chun Tien

Ting-Wei Chiang

Chi-Yu Lu

Chung-Te Lin

Jiann-Tyng Tzeng

Shih-Wei Peng

Po-Hsiang Huang

Yi-Kan Cheng

Fong-yuan Chang

Chin-Chou Liu

Ru-Gun Liu

Shao-Lun Chien

Lee-Chung Lu

Wei-Cheng Lin

Wen-Hao Chen

Ting Yu Chen

Shun-Li Chen

Jung-Chou Tsai

Chih-Ming Lai

Chih-Liang Chen

Charles Chew-Yuen Young

Sheng-Hsiung Chen

Kam-Tou Sio

Chun-Kuang Chen

Yung-Sung Yen

Yu-Ti Su

Jerry Chang Jui Kao

Yen-Hung Lin

Jung-Hsuan Chen

Chi-Yeh Yu

Wei-Hsiang Ma

Meng-Kai Hsu

Jiun-Jia Huang

Yi-Hsin Ko

Shu-Min Chen

Jung-Chan Yang

Tsong-Hua Ou

Chin-Hsiung Hsu

Chun-Fu Chen

Ya-Chi Chou

Jen-Hang Yang

Ze-Sian Lu

Hui-Wen Li

Tzung-Yo Hung

Ken-Hsien Hsieh

Huang-Yu Chen

Chin-Chang Hsu

Kao-Cheng Lin

Yung-Chin Hou

Cheng-I Huang

Shyue-Shyh Lin

Ching Fu Chang

You-Cheng Xiao

Chien-Chi Tien

Jung-chan Yang

Ru-Yu Wang

Jhih-Jian Wang

Ming-Jin Huang

An integrated circuit device includes a first power rail, a first active area extending in a first direction, and a plurality of gates contacting the first active area and extending in a second direction perpendicular to the first direction. A first transistor includes the first active area and a first one of the gates. The first transistor has a first threshold voltage (VT). A second transistor includes the first active area and a second one of the gates. The second transistor has a second VT different than the first VT. A tie-off transistor is positioned between the first transistor and the second transistor, and includes the first active area and a third one of the gates, wherein the third gate is connected to the first power rail.

Tie off device

A semiconductor device includes: a first multi-gate field effect transistor (FET) disposed over a substrate, the first multi-gate FET including a first active region; and a second multi-gate FET disposed over the first multi-gate FET, the second multi-gate FET including a second active region. The first active region and the second active region are not fully projected in a vertical direction perpendicular to the substrate.

Semiconductor device

A method of making an integrated circuit includes steps of selecting a first cell and a second cell for an integrated circuit layout from a cell library in an electronic design automation (EDA) system, the first and second cells each having a cell active area, a cell gate electrode, at least one fin of a first set of fins, and a cell border region, each cell also having the active area at an exposed side, and placing the first exposed side against the second exposed side at a cell border. The method also includes operations of aligning at least one fin of the first set of fins with at least one fin of the second set of fins across a cell border.

Integrated circuit having fins crossing cell boundary

A semiconductor device includes a substrate; and a cell region having opposite first and second sides, the cell region including active regions formed in the substrate; relative to an imaginary first reference line, a first majority of the active regions having first ends which align with the first reference line, the first side being parallel and proximal to the first reference line; relative to an imaginary second reference line in the second direction, a second majority of the active regions having second ends which align with the second reference line, the second side being parallel and proximal to the second reference line; and gate structures correspondingly on first and second ones of the active regions; and relative to the second direction, a first end of a selected one of the gate structures abuts an intervening region between the first and second active regions.

Variable-sized active regions for a semiconductor device and methods of making same

A method of designing a semiconductor device including the operations of analyzing a vertical abutment between a first standard cell block and a second cell block and, if a mismatch is identified between the first standard cell block and the second cell block initiating the selection of a first modified cell block that reduces the mismatch and a spacing between the first modified cell block and the second cell block, the first modified cell block comprising a first abutment region having a continuous active region arranged along a first axis parallel to an edge of the vertical abutment, and replacing the first standard cell block with the first modified cell block to obtain a first modified layout design and devices manufactured according to the method.

Reduced area standard cell abutment configurations

A method (of generating a layout diagram of a wire routing arrangement in a multi-patterning context having multiple masks, the layout diagram being stored on a non-transitory computer-readable medium) includes: placing, relative to a given one of the masks, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining whether the first candidate location results in a group of cut patterns which violates a design rule; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

Method and system for generating layout diagram including wiring arrangement

A semiconductor device includes a fin structure, a first conductive line, a second conductive line and a first conductive rail. The fin structure is disposed on a substrate. The first conductive line is arranged to wrap a first portion of the fin structure. The second conductive line is attached on a second portion of the fin structure. The second portion is different from the first portion. The first conductive rail is disposed in a same layer as the first conductive line and the second conductive line on the substrate. The first conductive rail is attached on one end of the first conductive line and one end of the second conductive line for electrically connecting the first conductive line and the second conductive line.

Semiconductor device having fin structure

A system (for generating a layout diagram of a wire routing arrangement) includes a processor and memory including computer program code for one or more programs, the system generating the layout diagram including: placing, relative to a given one of masks in a multi-patterning context, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining that the first candidate location results in an intra-row non-circular group of a given row which violates a design rule, the intra-row non-circular group including first and second cut patterns which abut a same boundary of the given row, and a total number of cut patterns in the being an even number; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.

System and method for generating layout diagram including wiring arrangement

A transmission gate structure includes first and second PMOS transistors positioned in a first active area, first and second NMOS transistors positioned in a second active area parallel to the first active area, and four metal segments parallel to the active areas. A first metal segment overlies the first active area, a fourth metal segment overlies the second active area, and second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments. A first conductive path connects gates of the first PMOS and NMOS transistors, a second conductive path connects gates of the second PMOS and NMOS transistors, a third conductive path connects a source/drain (S/D) terminal of each of the first and second PMOS transistors and first and second NMOS transistors and includes a first conductive segment extending across at least three of the four metal segments.

Transmission gate structure

A circuit includes a first transistor, a second type-one transistor, a first type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The third type-one transistor has a first active-region conductively connected with an active-region of the first type-one transistor. Third type-one transistor has a second active-region and a gate conductively connected to each other. The fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply. The fifth type-one transistor is configured to be at a conducting state.

Isolation circuit between power domains

A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Method for manufacturing a cell having pins and semiconductor device based on same

Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor. These exemplary integrated circuit layouts disclose various configurations and arrangements of various geometric shapes that are situated within an oxide diffusion (OD) layer, a polysilicon layer, a metal diffusion (MD) layer, the first metal layer, and/or a second metal layer of a semiconductor stack. In the exemplary embodiments to follow, the various geometric shapes within the first metal layer are situated within the multiple rows of the electronic device design real estate and the various geometric shapes within the OD layer, the polysilicon layer, the MD layer, and/or the second metal layer are situated within multiple columns of the electronic device design real estate.

Double rule integrated circuit layouts for a dual transmission gate

A method for forming a semiconductor device includes: forming a fin structure protruding from a substrate of the semiconductor device; forming a first conductive rail on the substrate, wherein a side of the first conductive rail facing the fin structure has a first recess and a second recess; forming a first conductive line in a same layer as the first conductive rail by filling a first conductive material into the first recess, wherein the first conductive line extends across the fin structure and wraps a portion of the fin structure; and forming a second conductive line in the same layer as the first conductive rail by filling a second conductive material into the second recess, wherein the second conductive line extends across the fin structure and contacts another portion of the fin structure.

Growing community of inventors

Tainan, Taiwan

Pin-Dai Sue