Massachusetts Institute of Technology

Nanyang Technological University

Pilsoon Choi

Li-Shiuan Peh

Chirn-Chye Boon

Eugene A Fitzgerald

Dimitri A Antoniadis

Chirn Chye Boon

Jason Hao Gao

Nadesh Ramanathan

Suhaib Fahmy

Dimitri Antoniadis

A high voltage logic circuit for high voltage system application comprises a first device layer formed from a first semiconductor material and comprises a low voltage logic circuit; and a second device layer formed from a second different semiconductor material and comprising one or more components of an additional circuit for generating a high voltage logic output from a low voltage logic input from the low voltage logic circuit; wherein the first and second device layers are integrally formed. Also, a logic circuit comprising: a low voltage logic input; a high supply voltage input; a circuit ground voltage input; a high voltage output; a first tail device made from a first semiconductor material; and a second tail device made from a second different semiconductor material; wherein the first and second tail devices are coupled, in series, between the high voltage output and the circuit ground voltage input; and wherein respective gates of the first and second tail devices are coupled, in parallel, to the low voltage logic input.

High voltage logic circuit

An apparatus and method for wireless communication, and a method of fabricating the apparatus. The apparatus comprises two or more transceiver array groups, each transceiver array group comprising one or more radio frequency, RF, circuits, and one or more RF front end, RF FE, circuits; wherein the transceiver array groups are configured to operate at different frequencies; wherein the transceiver array groups are configured to be connected to one corresponding digital baseband processor; and wherein the transceiver array groups comprise at least one first transceiver array group configured to operate at cm wavelength or larger. Preferably, the transceiver array groups comprise at least one second transceiver array group configured to operate at mm wavelength.

Apparatus and method for wireless communication

An integrated circuit () adapted for mobile communication is disclosed. The circuit comprises a first device layer formed of a first semiconductor material and having at least a first circuit portion (); and a second device layer formed of a second semiconductor material different to the first semiconductor material and having at least a second circuit portion (), wherein the first and second device layers are integrally formed, and the first circuit portion is electrically coupled to the second circuit portion to enable the mobile communication using first and second wireless communication protocols. A related mobile computing device is also disclosed.

Integrated circuit adapted for mobile communication and related mobile computing device

Growing community of inventors

Cambridge, MA, United States of America

Pilsoon Choi