Advanced Interconnect Materials, LLC

Pilsang Yun

Junichi Koike

Hideaki Kawakami

Mayumi Naito

To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.

Electrode for oxide semiconductor, method of forming the same, and oxide semiconductor device provided with the electrode

An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layercomposed of an oxide semiconductor material containing indium, an ohmic electrodeprovided on the semiconductor layerand having an ohmic contact with the semiconductor layer, and an intermediate layerprovided between the semiconductor layerand the ohmic electrode, wherein the intermediate layerincludes a first regionwhose indium atomic concentration is greater than that of an interior of the semiconductor layerand a second regionwhose indium atomic concentration is less than that of the first region.

Semiconductor device

Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistorof the present invention includes a semiconductor layercomposed of oxide semiconductor, a source electrodeand a drain electrodethat are layers composed mainly of copper, and oxide reaction layersprovided between the semiconductor layerand each of the source electrodeand drain electrode, and high-conductance layersprovided between the oxide reaction layersand semiconductor layer

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Pilsang Yun