Lg Display Co., Ltd.

PilSang Yun

SeHee Park

Jiyong Noh

Jaeyoon Park

JungSeok Seo

InTak Cho

Jaeman Jang

Jeyong Jeon

Kwanghwan Ji

ChanYong Jeong

HyungJoon Koo

HongRak Choi

DaeHwan Kim

JuHeyuck Baeck

Jonguk Bae

YongHo Jang

JunHyeon Bae

SangYun Sung

KyungChul Ok

JaeHyeon Park

KiHoon Park

A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

Thin-film transistor and display device including the same

Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

Apparatus and method of manufacturing oxide film and display apparatus including the oxide film

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

Electronic device

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

Thin-film transistor, display device including the same, and method of manufacturing the same

Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

Thin film transistor comprising oxide semiconductor layer and silicon semiconductor layer and display apparatus comprising the same

A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

Display device comprising thin film transistors and method for manufacturing the same

A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

Display apparatus comprising different types of thin film transistors and method for manufacturing the same

A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

Thin film transistor, and display panel and display apparatus using the same

Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

Thin film transistor and display apparatus comprising the same

A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

Thin film transistor, method for manufacturing the same and display apparatus comprising the same

An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

Transistor and electronic device

An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

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Paju-si, South Korea

PilSang Yun