Samsung Electronics Co., Ltd.

Nvisana Co., Ltd.

Pil-kwon Jun

Seung-Ki Chae

Jung-Dae Park

Kwang-Shin Lim

Dong-Jin Park

Hun-Jung Yi

Sang-Oh Park

Mi-sook Jeon

June-ing Gil

Yong-Kyun Ko

Tae-Hyo Choi

Yang-Koo Lee

Se-Yeon Kim

Chun-deuk Lee

Myoung-Ok Han

Jin-sung Kim

Sang-Mun Chon

Sun-Hee Park

Mi-Ae Kim

Jin-ho Hwang

Da-Hee Lee

Jae-Seok Lee

Il-hyun Sohn

In-Hoi Doh

Yong-ik Sung

Disclosed are an apparatus for analyte sampling, and a method of analyte sampling and an analyte sampling analysis system using the same. The apparatus includes a spray unit to receive a trapping solution and an analyte sample, and to mix and spray the analyte sample and the trapping solution of an aerosol state together, a spray chamber to provide a space to primarily trap an analyte material, which is contained in the analyte sample, in the trapping solution of the aerosol state, a trapping tube to secondarily trap the analyte material, which is not trapped in the spray chamber, by receiving the analyte sample and the trapping solution in the aerosol state from the spray chamber and mixing the trapping solution with the analyte sample, a trapping container to receive the trapping solution having the analyte material trapped therein through the trapping tube, and a sample transfer unit to feed purge gas into the trapping container to transfer the trapping solution having the analyte material trapped therein to an analysis unit through a sample transfer line by the purge gas.

Apparatus for analyte sampling, method of analyte sampling and analyte sampling analysis system

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Methods of manufacturing a semiconductor device using compositions for etching copper

A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

Methods of manufacturing reference sample substrates for analyzing metal contamination levels

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

A passivation layer pattern having an opening is formed on a substrate having a metal wiring pattern formed thereon. The opening partially exposes an upper surface of the metal wiring pattern. A photoresist pattern is formed on the passivation layer pattern. The photoresist pattern has an opening that exposes the opening of the passivation layer pattern, and metal is electroplated in the openings to form a bump electrode. The photoresist pattern is removed using a composition including monoethanolamine and dimethylacetamide.

Composition for removing photoresist and method of forming a bump electrode in a semiconductor device using the composition

A wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels.

Wafer guides for processing semiconductor substrates

A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CHCH&#x2014;O&#x2014;R&#x2014;CO&#x2014;N&#x2014;RROH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R&#x2014;O&#x2014;R&#x2014;COOR, and alkanolamine, represented by a chemical formula of NHRROH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.

Composition for stripping photoresist and method of preparing the same

In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

Method of stripping a photoresist from a semiconductor substrate dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide

Method of stripping a photoresist from a semiconductor substrate using dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide

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Pil-kwon Jun