Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Pil-Kwon Jun

Seung-Ki Chae

Hun-Jung Yi

Jung-Dae Park

Sang-mun Chon

Kyung-dae Kim

Yong-Kyun Ko

Sang-oh Park

Young-Ho Kim

Dong-jin Park

Sang-Mun Chon

Dong-Jin Park

Kwang-Shin Lim

Mi-sook Jeon

Je-eung Park

Yang-Koo Lee

Sang-moon Chon

Jin-ho Hwang

Il-hyun Sohn

Kook-Joo Kim

Kyung-Dae Kim

Hoi-Sik Chung

Sang-mun Chun

June-ing Kil

Sang-sik Moon

Chang-Ho Lee

Jin-Ho Kim

Jae-Ho Kim

Dong-Won Kim

Jong-Soo Kim

Jung-hoon Kim

Sang-Oh Park

Young-hwan Yun

Sung-il Kim

Sun-Hee Park

Jin-A Ryu

Tae-Hyo Choi

Sang-Mi Lee

Jun-ing Gil

Da-Hee Lee

Jae-Jun Ryu

Nae-ry Yu

Min-sang Yun

Myoung-Ok Han

In-Hoi Doh

Bo-yong Lee

Jong-Cheol Jeong

Dong-Won Hwang

Dong-Chul Heo

Gyoung-Eun Byun

Ki-seok Lee

Bo-Yong Lee

Joon-ing Kil

Kyung-Hwan Jeong

Jung-In La

Gyu-hwan Kwack

Me-suk Jun

Boo-sup Lee

Sang-Eon Lee

An apparatus for providing a sample gas includes a gas dosing part, a first pressure gauge for measuring a pressure of a sample gas dosed through the gas dosing part, a plurality of flow lines positioned between the gas dosing part and a gas analyzer that can be opened or closed according to the pressure measured by the first pressure gauge, a plurality of control valves respectively formed in the plurality of flow lines and controlling the plurality of flow lines to be opened or closed, a bypass line formed on at least one of the plurality of flow lines and exhausting some of the sample gas flowing along the flow lines, and a controller for selecting one of the plurality of flow lines according to the pressure measured by the first pressure gauge and controlling the control valves formed in the selected flow line.

Apparatus for providing sample gas and related methods

In a method of detecting inhomogeneity of a layer, an incident light may be irradiated to at least two regions of the layer at a first incident angle position. First reflected lights reflected from the two regions of the layer may be sensed. The incident light may be irradiated to the at least two regions of the layer at a second incident angle position. Second reflected lights reflected from the two regions of the layer may be sensed. The first reflected lights and the second reflected lights may be compared with each other to obtain the inhomogeneity of the layer. Thus, the layer having a spot may be found.

Methods of detecting inhomogeneity of a layer and apparatus for performing the same

In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

Semiconductor devices and methods of manufacturing the same

A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Method of cleaning a quartz part

In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Composition for etching silicon oxide and method of forming a contact hole using the same

Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same

An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device

A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

Resist and etching by-product removing composition and resist removing method using the same

A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5&#x2013;30% by weight of ammonium hydroxide, about 23&#x2013;70% by weight of an organic solvent and about 10&#x2013;50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

Cleaning solution for removing anti-reflective coating composition

An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Apparatus for manufacturing integrated circuit device

An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

Apparatus for drying a substrate using an isopropyl alcohol vapor

A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

Cleaning solution and method of cleaning anti-reflective coating composition using the same

A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

System and method for drying semiconductor substrate

A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Photoresist stripper composition and method for stripping photoresist using the same

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Seoul, South Korea

Pil-Kwon Jun