Stmicroelectronics S.a.

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Antoine Pavlin

Jean Barret

A method and a circuit for protecting a transistor that controls the supply of an at least partially inductive load, including lowering the demagnetization voltage of the inductive load with respect to a demagnetization voltage set by a break-over component connected between a conduction terminal and the control terminal of the transistor.

Protection of a power transistor

The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N-type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.

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Luynes, France

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