Avago Technologies Fiber IP (singapore) Pte. Ltd

Avago Technologies General IP (singapore) Pte. Ltd.

Pietro Della Casa

Ruiyu Fang

Alessandro Stano

Marzia Rosso

Simone Codato

Claudio Coriasso

Cesare Rigo

Paolo Valenti

Roberto Paoletti

Giammarco Rossi

Giuliana Morello

Giancarlo Meneghini

Paola-Ida Gotta

An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.

Semiconductor lasers and etched-facet integrated devices having H-shaped windows

A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductor devices

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductors devices

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Turin, Italy

Pietro Della Casa