Nxp B.v.

Epcos Ag

Pieter Simon Van Dijk

Johannes Josephus Theodorus Marinus Donkers

Petrus Hubertus Cornelis Magnee

Dolphin Abessolo Bidzo

Robertus T F Van Schaijk

Piebe Anne Zijlstra

Ronald Koster

This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.

Integrating silicon-BJT to a silicon-germanium-HBT manufacturing process

Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode () and a second electrode (), the first and second electrodes being separated by a cavity (), the substrate including an insulating surface layer (), the first electrode () being arranged on the insulating surface layer a first metal body () being adjacent to the first electrode and arranged as anchor of the second electrode () the second electrode being arranged as a beam-shaped body () located on the first metal body and above the first electrode; the cavity () being laterally demarcated by a sidewall of the first metal body.

Manufacturing a MEMS element having cantilever and cavity on a substrate

Growing community of inventors

Renkum, Netherlands

Pieter Simon Van Dijk