Globalfoundries Inc.

Imec Vzw

Pieter Schuddinck

Bartlomiej Jan Pawlak

Dmitry Yakimets

In one example, the method disclosed herein includes, among other things, forming a sacrificial structure around a plurality of stacked substantially un-doped nanowires at a location that corresponds to the channel region of the device, performing a selective etching process through a cavity to remove a second plurality of nanowires from the channel region and the source/drain regions of the device while leaving a first plurality of nanowires in position, and forming a metal conductive source/drain contact structure in each of the source/drain regions, wherein each of the metal conductive source/drain contact structures is positioned all around the first plurality of nanowires positioned in the source/drain regions.

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Belgium, Germany

Pieter Schuddinck