Mapper Lithography IP B.v.

Technische Universiteit Delft

U.S. Philips Corporation

Applied Materials Israel Limited

Delmic B.v.

Asml Netherlands B.v.

Fei Comapny

Other

Hitachi High-tech Corporation

Delmic IP B.v.

Agere Systems Inc.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Agere Systems Guardian Corp.

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Elith LLC

Pieter Kruit

Marco Jan-Jaco Wieland

Stijn Willem Herman Karel Steenbrink

Bert Jan Kampherbeek

Alexander Hendrik Vincent Van Veen

Remco Jager

Aernout Christiaan Zonnevylle

Jacob Pieter Hoogenboom

Yanxia Zhang

Guido De Boer

Erwin Slot

Michel Pieter Dansberg

Marco Jan Jaco Wieland

Tijs Frans Teepen

Johannes Christiaan Van 't Spijker

Martijn J Van Bruggen

Jan-Jaco Marco Wieland

Jürgen Frosien

Ron Naftali

Yan Ren

Arno Jan Bleeker

Pieter Willem Herman De Jager

Karel Diederick Van Der Mast

Karel D Van Der Mast

Warren Kazmir Waskiewicz

Victor Katsap

Marc Smits

Stijn Willem Karel Herman Steenbrink

Nalan Liv Hamarat

Alexander Hendrik Van Veen

Daniel Moonen

Arno J Bleeker

Alexander Henstra

Peter Christiaan Tiemeijer

Ralf Schmid

Benjamin John Cook

John Breuer

Hideto Dohi

Hendrik Nicolaas Slingerland

Ali Mohammadi-Gheidari

Michiel David Nijkerk

Erik René Kieft

Guido Martinus Henricus Knippels

Roman Barday

Kars Z Troost

Fredericus Bernardus Kiewiet

Bob Van Someren

Hindrik Willem Mook

Stijn Willem Steenbrink

Jacques Nonhebel

Nalan Liv

Vipin Nagnath Tondare

Johannes Christiaan Van't Spijker

Marco Wieland

Angela Carolina Narváez-González

John A Venables

J Chmelik

Stijin Willem Herman Karel Steenbrink

Dieter Winkler

Gun Sari Mari Berglund

Michel Dansberg

Angela Carolina Narvaez

Aernout Christian Zonnevylle

Alexander Van Veen

Frank Van Overbeeke

Ali Mohammadi Gheidari

Johannes Christiaan Van 'T Spijker

Bas Gravendeel

Marco J-J Mapper Lithography Hldg Bv Wieland

J C Mapper Lithography Hldg Bv VAN'T Spijker

Angela Carolina NARVÁEZ-GONZÁLEZ

A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.

Charged particle beam system, corrector for aberration correction of a charged particle beam, and method thereof

The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

Method for inspecting a sample using an assembly comprising a scanning electron microscope and a light microscope

A charged particle beam device for irradiating or inspecting a specimen is described. The charged particle beam device includes a charged particle beam source for generating a primary charged particle beam and a multi-aperture lens plate having a plurality of apertures for forming four or more primary. Two or more electrodes having one opening, e.g. having one opening each, for the primary charged particle beam or the four or more primary beamlets are provided. The charged particle beam device further includes a collimator for deflecting a first primary beamlet, a second primary beamlet, a third primary beamlet, and a fourth primary beamlet of the four or more primary beamlets with respect to each other. The charged particle beam device further includes an objective lens unit having three or more electrodes, each electrode having openings for the four or more primary beamlets.

Method for inspecting a specimen and charged particle beam device

Disclosed are an apparatus and method for generating a plurality of substantially collimated charged particle beamlets. The apparatus includes a charged particle source for generating a diverging charged particle beam, a beam splitter for splitting the charged particle beam in an array of charged particle beamlets, a deflector array includes an array of deflectors including one deflector for each charged particle beamlet of said array of charged particle beamlets, wherein the deflector array is configured for substantially collimating the array of diverging charged particle beamlets. The apparatus further includes a beam manipulation device configured for generating electric and/or magnetic fields at least in an area between the charged particle source and the deflector array. The apparatus has a central axis, and the beam manipulation device is configured for generating electric and/or magnetic fields substantially parallel to the central axis and substantially perpendicular to the central axis.

Multi-beam charged particle source with alignment means

The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors () each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors () each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

Beam deflection device, aberration corrector, monochromator, and charged particle beam device

The invention relates to a charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets. The charged particle beam device comprises a specimen holder for holding a specimen; a source for producing a beam of charged particles; and an illuminator for converting said beam of charged particles into a plurality of charged particle beamlets and directing said plurality of charged particle beamlets onto said specimen. According to the disclosure, the illuminator comprises a multi-aperture lens plate having a plurality of apertures for defining the corresponding plurality of charged particle beamlets; as well as at least a first electrode for generating an electrical field at a surface of the multi-aperture lens plate. The apertures in said multi-aperture lens plate have a noncircular cross-sectional shape to correct for neighbouring aperture induced aberrations. This allows for decreased spot size, and with this imaging resolution of the device is increased.

Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which

Lithography system, sensor and measuring method

The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target () such as a wafer, said target being included in said system by means of a target table (), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target () and target table (), a pressure drop (P) arises.

Lithography system, method of clamping and wafer table

Disclosed is an apparatus and method for inspecting a sample. The apparatus includes:

Apparatus and method for inspecting a sample using a plurality of charged particle beams

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror. At least one of the electron mirrors is arranged to provide a correcting aberration to a reflected electron beam.

Aberration correcting device for an electron microscope and an electron microscope comprising such a device

A multi-beam charged particle column for inspecting a surface of a sample includes a source for creating multiple primary charged particle beams which are directed towards the sample, an objective lens unit for focusing the primary charged particle beams on the sample, a detector for detecting signal charged particles from the sample, and a magnetic deflection unit arranged between the detector and the sample. The magnetic deflection unit includes a plurality of strips of a magnetic or ferromagnetic material. At least two strips of the plurality of strips are located at opposite sides of a trajectory of a primary charged particle beam and within a distance equal to a pitch of the trajectories of the primary charged particle beams at the magnetic deflection unit. The strips are configured to establish a magnetic field having field lines substantially perpendicular to the trajectories of the primary charged particle beams.

Signal separator for a multi-beam charged particle inspection apparatus

An apparatus for inspecting a sample includes a sample holder for holding the sample; a multi beam charged particle generator for generating an array of primary charged particle beams; an electro-magnetic lens system for directing the array of primary charged particle beams into an array of separate focused primary charged particle beams on the sample; a multi-pixel photon detector arranged for detecting photons created by the focused primary charged particle beams when the primary charged particle beams impinge on the sample or after transmission of said primary charged particle beams through the sample; and an optical assembly for conveying photons created by at least two adjacent focused primary charged particle beams of the array of separate focused primary charged particle beams to distinct and/or separate pixels or to distinct and/or separate groups of pixels of the multi-pixel photon detector.

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

Method for inspecting a specimen and charged particle multi-beam device

Growing community of inventors

Delft, Netherlands

Pieter Kruit