Asml Netherlands B.v.

Asml Holding N.v.

Pieter-Jan Van Zwol

Mária Péter

David Ferdinand Vles

Arnoud Willem Notenboom

Maxim Aleksandrovich Nasalevich

Willem Joan Van Der Zande

Willem-Pieter Voorthuijzen

Paul Janssen

Marcus Adrianus Van De Kerkhof

Johannes Petrus Martinus Bernardus Vermeulen

Adrianus Johannes Maria Giesbers

Johan Hendrik Klootwijk

Evgenia Kurganova

Derk Servatius Gertruda Brouns

Erik Achilles Abegg

Aleksandar Nikolov Zdravkov

Andrey Alexandrovich Nikipelov

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Ties Wouter Van Der Woord

James Norman Wiley

Pradeep Kumar Govil

Aage Bendiksen

Peter Simon Antonius Knapen

Hendrikus Jan Wondergem

Antonius Franciscus Johannes De Groot

Egbert Lenderink

Laurentius Cornelius De Winter

Matthias Kruizinga

Dennis De Graaf

Wouter Joep Engelen

Hrishikesh Patel

Gijsbert Rispens

Gerrit Van Den Bosch

Nadja Schuh

Nirupam Banerjee

Michiel Alexander Blauw

Chaitanya Krishna Ande

Antonius Willem Verburg

Johannes Joseph Janssen

Marcel Peter Meijer

Wouter Rogier Meijerink

Raymond Olsman

Leonid Aizikovitsj Sjmaenok

Nicolae Maxim

Claudia Piliego

Vadim Yevgenyevich Banine

Johannes Jacobus Matheus Baselmans

Jozef Maria Finders

Jozef Petrus Henricus Benschop

Robbert Jan Voogd

Luigi Scaccabarozzi

Tamara Druzhinina

Alexey Sergeevich Kuznetsov

Pieter Cristiaan De Groot

Alexander Ludwig Klein

Michael Alfred Josephus Kuijken

Maksym Yuriiovych Sladkov

Florian Didier Albin Dhalluin

Jan Hendrik Willem Kuntzel

Gerard Frans Jozef Schasfoort

Manfred Petrus Johannes Maria Dikkers

Stefan Michael Bruno Baumer

Maxime Biron

Arie Jeffrey Den Boef

Martinus Hendrikus Antonius Leenders

Andrei Mikhailovich Yakunin

Han-Kwang Nienhuys

Sander Bas Roobol

Yang-Shan Huang

Hendrikus Gijsbertus Schimmel

Arjen Boogaard

Johannes Christiaan Leonardus Franken

Sarathi Roy

Alexey Olegovich Polyakov

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Jeroen Huijbregtse

Maarten Van Kampen

Nitish Kumar

Mohammad Reza Kamali

Mahdiar Valefi

Eric Willem Felix Casimiri

Sander Baltussen

Zomer Silvester Houweling

Thijs Kater

Kevin Kornelsen

Guido Salmaso

Johannes Franciscus Martinus D'Achard Van Enschut

Sicco Oosterhoff

Anton Wilhelmus Duys

Sten Vollebregt

Inci Donmez Noyan

Lourdes Ferre Llin

Anne-Sophie Rollier

Richard Beaudry

Stephane Martel

Eric Willem Casimiri

Beatrijs Louise Verbrugge

Michael Alfred Kuijken

Martinus Hendrikus Leenders

Johannes Petrus Vermeulen

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

A method of manufacturing a pellicle membrane, the method including: providing a first sacrificial layer on a planar substrate to form a stack; and providing, to at least a portion of the stack, at least one metal silicide or doped metal silicide pellicle core layer which forms at least part of the pellicle membrane is described. Also described is a pellicle membrane assembly having a substrate, a first sacrificial layer, and at least one metal silicide or doped metal silicide pellicle layer which forms at least part of a pellicle core, as well as a lithography apparatus including such a pellicle.

Pellicle membrane

Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle

A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.

Transmissive diffusor

A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Pellicle and pellicle assembly

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Method of manufacturing a membrane assembly

A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Pellicle for EUV lithography

A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Metal-silicide-nitridation for stress reduction

A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing

The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.

Graphene pellicle lithographic apparatus

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Eindhoven, Netherlands

Pieter-Jan Van Zwol