Centre National De La Recherche Scientifique

Ecole Centrale De Lyon

Other

Pierre Viktorovitch

Jean-Louis Leclercq

Michel Garrigues

Christian Seassal

Xavier Letartre

Alain Spisser

The present invention relates to a device for controlling optical frequency (F, F) about a central working frequency (F). This device comprises a vertical cavity () formed of two parallel and partially reflecting walls (,), and a membrane () comprising at least one layer (,) structured in the form of a photonic crystal. In this device, the two walls (,) are separated by an optical distance substantially proportional to half the wavelength (&#x3bb;) corresponding to the central working frequency (F). The membrane () is integrated between the walls (,) of the cavity () and devised in such a way as to exhibit a mode of optical resonance at this central working wavelength (&#x3bb;). At least one layer of the device is made up of at least one portion of a material exhibiting nonlinear optical properties. The present invention also relates to various systems implementing means of optical pumping and such a device for controlling optical frequency, as well as to a method of manufacturing such a device for controlling optical frequency.

Device for controlling optical frequency, method of manufacturing such a device

The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.

Semiconductor optoelectronic device with electrically adjustable transfer function

The invention relates to an optoelectronic device including filter means () for transmitting a selected spectral portion of light waves and for reflecting a complementary spectral portion thereof, placed between means () for reflecting the chosen spectral portion towards the filter means and converter means () for transmitting the light waves to be filtered to the filter means. The converter means are at a first distance (d) from the filter means chosen so that the waves that they transmit to them and the reflected complementary spectral portion create a first standing wave whose associated electric field has a node in the converter means () and at a second distance (d) from the chosen reflector means so that the chosen spectral portion and the chosen and reflected spectral portion create a second standing wave whose associated electric field has an antinode in the converter means.

Optoelectronic device with integrated wavelength filtering

The invention is an optoelectronic device comprising first means defining a first thick resonant cavity having a multiple transmission resonant modes, second means defining a second thin resonant cavity having one transmission resonant mode, means for optically coupling the first and second means, and electrostatic means designed to apply to the second means an electric voltage selected to vary the thickness of the second cavity and the special position of its resonant mode, such that it coincides with one of the resonant modes of the first cavity.

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Tassin la Deml Lune, France

Pierre Viktorovitch