Alstom Transport Sa

Mitsubishi Denki Kabushiki Kaisha

Alstom

Alstom Transport Technologies

Pierre Solomalala

Emmanuel Dutarde

Jose Saiz

Benoit Boursat

Kiyoshi Arai

Makoto Kondou

Philippe Lasserre

Nathalie Martin

Jacques Cettour-Rose

Jos&eacute; Saiz

Beno&icirc;t Boursat

José Saiz

The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.

Power semiconductor device

One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.

Arrangement of conductive connectors in a power semiconductor device

A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.

Power switching module and inverter equipped therewith

An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150 &mgr;m.

Substrate for an electronic power circuit, and an electronic power module using such a substrate

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Aureilhan, France

Pierre Solomalala