Trixell

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Isorg

Trixell S.a.s.

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Pierre Rohr

Mohammed Benwadih

Jean-Marie Verilhac

Bruno Bosset

Simon Charlot

Jean-Yves Laurent

Jean-Luc Martin

Bertrand Dupont

Jean-Michel Vignolle

Thibaut Wirth

Jean-Luc Moro

Gérard Vieux

Simon Marecaux

David Couder

Emeline Berthod

Jérôme Joimel

Dubois Sébastien

Claude Venin

Sébastien Dubois

A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Optoelectronic array device having an upper transparent electrode

An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function &#x3a6;; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function &#x3c6;and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function &#x3c6;of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 10&#x3a9;.

Organic optoelectronic device, array of such devices and method for producing such arrays

An image detector comprises a sensor produced on a first monolithic substrate comprising a set of pixels organized in a matrix on rows and columns and configured to generate signals as a function of a radiation striking the detector, column conductors, each linking the pixels of a same column and intended to convey the signals generated by the pixels, at least one bump contact situated at the periphery of the first substrate and outside of the matrix of pixels and linked to the column conductors. At least two column conductors are connected together on the first substrate outside of the matrix of pixels and the column conductors connected together converge toward the at least one bump contact.

Pooling of two columns of pixels of an image detector

An electromagnetic radiation detector used for imaging comprises a plurality of pixels, each of which converts the electromagnetic radiation to which it is subjected into an electrical signal. Each pixel comprises a plurality of photosensitive elements each converting the radiation received by the photosensitive element into an elementary electrical signal and selection means that select from the elementary electrical signals generated by the photosensitive elements so as to form the electrical output signal of the pixel depending on a gain range chosen for the detector.

Electromagnetic radiation detector with gain range selection

An imaging device comprises a sensor of surface area of at least 10 cmand comprising: an image zone produced on a single substrate and comprising a group of pixels disposed in rows and columns, the number of pixels per column not being uniform for all the columns of pixels, each pixel collecting electric charges generated by a photosensitive element, row conductors linking the pixels row by row, column conductors linking the pixels column by column, row addressing blocks linked to the row conductors to address each row of pixels individually, and column reading blocks linked to the column conductors to read the electric charges collected by the pixels of the row selected by the row addressing blocks, the column reading blocks being situated at the periphery of the image zone; the row addressing blocks and the column reading blocks being produced on the same substrate as the image zone.

CMOS imaging device having optimized shape, and method for producing such a device by means of photocomposition

The present invention relates to a method of fabricating a radiation detector comprising a photosensitive sensor assembly (), a scintillator () that converts the radiation into radiation to which the photosensitive sensor assembly () is sensitive, the scintillator () being fastened by adhesive bonding to the sensor assembly, the sensor assembly comprising a substrate () and several attached sensors (), the sensors () each having two faces (), a first face () of which is bonded to the substrate () and a second face () of which is bonded to the scintillator (). The method consists in linking the following operations:

Method of fabricating a radiation detector

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Moirans, France

Pierre Rohr