Thomson Composants Microondes

Thomspon Composants Microondes

Pierre Quentin

Marc Camiade

Pierre Savary

Jean-Philippe Brandeau

Gerard Pataut

A modem which is to be included in a badge or mobile station, in a system for the exchange of data by microwaves with a fixed station or beacon. The modem has at least one transistor that works as a detector in reception or as an amplifier for the transmission of a reflection signal, according to gate bias voltages (V.sub.gs0, V.sub.gs1) that are applied to it, and drain currents (I.sub.ds) that result therefrom. The transmission-reception switching is done by transistors that switch over loads, and hence currents, on an amplifier transistor, with amplitude or phase modulation. Such a modem may find particular application in short-distance telecommunication systems.

Modem for telecommunication system with a reflection amplifier function

In a system for the exchange of data by microwaves between a fixed station and a mobile station or portable badge, the information bit rate is limited, in the standby state, by the low power consumption of the badge and the high output impedance of the modem. To increase the information bit rate of the modem of a badge, the information processing circuit associated with the modem sends the modem an activation signal to reduce its output impedance. The means implemented are transistors that switch over the load of the detector transistor or of the amplifier transistor.

Circuit to increase the information bit rate in a system for the

Disclosed is a method for the interconnection of an integrated circuit to a support, replacing the connection wires. An integrated circuit chip is fixed to a support by the brazing of the ground plane metallizations. However, the input/output pads of the integrated circuit are connected to the metallized tracks of the support by means of metallized holes. The method can be applied to microwave circuits. FIG. 3.

Method for interconnection between an integrated circuit and a support

A circuit dedicated to the stabilization of integrated circuit temperature charactristics is achieved by integrating on the same semiconductor material chip as the integrated circuit and a device comprised of a sensor having at least two resistors (R1, R2 and/or R3, R4) supplied between two voltages (DC1, DC2) used alone or in conjunction with differential circuit structure (T2, T3) supplied by a current source (T1), comprising a transistorized variable load impedance (T4, T5, T6, T7). The resistors have different temperature coefficients, and the output voltage (VA or VB) of the bridge is temperature dependent. The integrated must incorporate a voltage-controlled element (transistor or diode).

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Paris, France

Pierre Quentin