Centre National De La Recherche Scientifique

Electricite De France

Nexcis

Electricite De France - Service National

Paris Sciences Et Lettres-quartier Latin

Centre National De La Recherche Scientifique-cnrs

Electricité De France, Société Anonyme

Pierre-Philippe Grand

Jean-François Guillemoles

Hariklia Deligianni

Lubomyr Taras Romankiw

Qiang Huang

Shafaat Ahmed

Donna S Zupanski-Nielsen

Daniel Lincot

Denis Guimard

Stéphane Taunier

Raman Vaidyanathan

Maurice Mason

Kathleen B Reuter

Etienne Briere

Myriam Paire

Salvador Jaime

Mike Van Iseghem

Cedric Broussillou

Olivier Kerrec

Michel Mahe

Moëz Ben-Farah

Pierre Cowache

Jacques Vedel

Philippe De Gasquet

Sébastien Jutteau

Eve Dufosse

Aurélien Duchatelet

Cédric Broussillou

Emmanuel Roche

Cedric Guerard

Julien Dupuis

Jesus Salvador Jaime Ferrer

Lubomyr Romankiw

Fabrication of a double-sided photovoltaic cell, with two opposite active surfaces, comprising a step of depositing, on each active surface, at least one electric contact. The deposition step comprises in particular a shared operation of depositing on each of the active surfaces, implemented by electrolysis in a shared electrolysis tank comprising: a first compartment for depositing a metal layer on a first active surface of the cell, for fabrication of a contact comprising said metal layer on the first active surface; and a second compartment for depositing, by oxidation, a metal oxide conductor layer on the second active surface of the cell, for the fabrication of a contact comprising said metal oxide layer on the second active surface.

Contacts for a photovoltaic cell with two active surfaces

The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions

The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure

The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film

The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI&#x3c;SB&#x3e;Y&#x3c;/SB&#x3e; compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

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The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

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Saint-Maximin la Sainte Baume, France

Pierre-Philippe Grand