Murata Manufacturing Co., Ltd.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Pierre Noe

Frédéric Voiron

Guy Parat

Frédéric Mazen

Julien El Sabahy

Emmanuel Picard

Paul-Henri Haumesser

A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

Nanowire structure enhanced for stack deposition

A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.

Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained

Growing community of inventors

Grenoble, France

Pierre Noe