Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

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Centre National De La Recherche Scientifique

Pierre Mur

Hubert Moriceau

Pierre-Jean Ribeyron

Maud Vinet

Frank Fournel

Jean Dijon

Franck Fournel

Jean-Charles Barbe

Julien Buckley

Philippe Thony

Thierry Baron

Joël Eymery

Fran&ccedil;ois Martin

Marie-No&euml;lle Semeria

Marie-Noëlle Semeria

Mathieu Baudrit

François Martin

François De Crecy

Hubert Eymery

No&euml;l Magnea

Kavita Surana

Cécile Oillic

Nol Magnea

A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same

A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate

A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index nand at least one second layer of complex refraction index n, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices nand non the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices nand n; deposition and annealing of the layers in accordance with the previously calculated parameters.

Method of manufacturing an optical reflector with semiconductor nanocrystals

The invention concerns a nanostructured device () comprising a substrate (), an intermediate layer (), a zone () consisting of multiple three-dimensional structured sites () made of semiconductor material, having chemical species () fixed to the surface of said three-dimensional nanostructured sites (). The inventive device is useful for making a biochip and an electronic memory. The invention also concerns a method for forming an electronic memory.

Nanostructured device

Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (). It consists in:

Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision

The invention relates to a method for producing a support comprising nanoparticles () for the growth of nanostructures (), said nanoparticles being organised periodically, the method being characterised in that it comprises the following steps:

Method for producing a support for the growth of localised elongated nanostructures

Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula SiGein which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: Method of preparing an optical or electronic component, comprising at least one step for preparing an SiOlayer using the method described above.

Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy

Method for automatic organization of microstructures or nanostructures and related device obtained

Growing community of inventors

Crolles, France

Pierre Mur