Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Pierre-Jean Ribeyron

Hubert Moriceau

Pierre Mur

Wilfried Favre

Fabien Ozanne

Oriol Nos Aguila

Marc Pirot

Samuel Harrison

A method and system for monitoring the quality of photovoltaic cells is described, the method including for each cell: an excitation step, during which the cell to be monitored is subjected to excitation at a predetermined level of excitation; a step of acquiring at least one luminescence image of the cell to be monitored after excitation; and a step of processing the acquired image. The invention is characterized in that, for each cell, there is provided a preliminary step for determining an excitation level adjusted to the cell, the respective adjusted excitation levels of the different cells to be monitored being adapted such that the luminescence intensities of the signals emitted by the different cells are equal at a given reference luminescence intensity.

Method and system for monitoring the quality of photovoltaic cells

A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same

A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate

This invention relates to a process for making a semiconductor device comprising the following steps: Application particularly for solar cells in thin layer.

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Saint Ismier, France

Pierre-Jean Ribeyron