Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Pierre Jean Ribeyron

Emmanuel Rolland

Pere Roca I Cabarrocas

Sébastien Dubois

Nicolas Enjalbert

Claude Jaussaud

Jerome Damon-Lacoste

The invention concerns a photovoltaic cell comprising a heterojunction between a crystalline semiconductor substrate () of first conductivity type and a first amorphous layer () in the same semiconductor material and of a second conductivity type opposite the first type and having a dopant concentration of between 1.10and 1.10atoms/cm. The photovoltaic cell further comprises a second amorphous layer () of same conductivity type as the first layer and having a dopant concentration of between 1.10and 1.10atoms/cm, said second layer being deposited directly on a first face of the substrate and being coated with said first layer. Finally, on a second face of the substrate opposite the first face, the cell comprises a third amorphous layer (), in the same material as the substrate and of same conductivity type with a dopant concentration of between 1.10and 1.10atoms/cm.

Heterojunction photovoltaic cell with dual doping and method of manufacture

A method for metallization of a semiconductor device. This method includes a) metallizing a set of collection fingers with a low-temperature serigraphy paste on at least a front surface of the semiconductor device, b) sintering, at a temperature below a temperature that would damage the semiconductor device, the serigraphy paste forming the set of metallized collection fingers, by performing a pressing operation on the collection fingers with a press, and c) metallizing at least one collection bus on the set of metallized collection fingers, electrically connecting the collection fingers to one another, with a low-temperature serigraphy paste.

Method for metallization of a semiconductor device

Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of:

Method for metallization of photovoltaic cells with multiple annealing operations

A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Semiconductor device with heterojunctions and an inter-finger structure

A method of forming contacts between at least one metallic layer and at least one semiconductor substrate through at least one layer of dielectric in a semiconductor device. The semiconductor device includes, on at least one base face of the semiconductor substrate, the dielectric layer. The metallic layer is stacked on the dielectric layer. The heated ends of plural protruding elements assembled on a support are brought into contact with the metallic layer simultaneously, thereby creating zones of melted metal under the heated ends of the protruding elements. The melted metal traverses the dielectric and amalgamates with the semiconductor of the substrate at the level of the zones of melted metal, thereby creating the contacts.

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Saint Ismier, France

Pierre Jean Ribeyron