Invisage Technologies, Inc.

Pierre Henri Rene Della Nave

Hui Tian

Jess Jan Young Lee

Edward Hartley Sargent

Igor C Ivanov

Michael Ross Malone

Michael Charles Brading

Rajsapan Jain

Edward H Sargent

In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.

Devices and methods for high-resolution image and video capture

Image sensors and methods of using image sensors are disclosed. In an embodiment, the image sensor includes pixel regions having optically sensitive material (OSM). A bias voltage is provided to the OSM via a bias electrode for each pixel region. A pixel circuit (PC) for each pixel region includes a read out circuit and a charge store (CS) coupled to the OSM of the respective pixel region. The PC resets voltage on the CS to a reset voltage during a reset period, integrates charge from the OSM to the CS during an integration period, and reads out a signal from the CS during a read out period. The PC includes a reference voltage node coupled to the CS during the reset period and the read out circuit during the read out period, a reference voltage is applied to the reference voltage node and is varied during operation of the PC.

Dark current reduction in image sensors via dynamic electrical biasing

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

Systems and methods for color binning

In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode

In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region. The pixel circuit is configured to reset the voltage on the charge store to a reset voltage during a reset period, to integrate charge from the optically sensitive material to the charge store during an integration period, and to read out a signal from the charge store during a read out period. The pixel circuit includes a reference voltage node to be coupled to the charge store during the reset period and the read out circuit during the read out period where a reference voltage is applied to the reference voltage node and is configured to be varied during the operation of the pixel circuit.

In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.

Growing community of inventors

Mountain View, CA, United States of America

Pierre Henri Rene Della Nave