U.S. Philips Corporation

Pierre Guittard

Philippe Jarry

Claude Piaget

Alphonse Ducarre

Bernard Guillemet

Lazhar Haji

Mohamed L Haji

A vitreous semiconductor supporting structure obtained by connecting semiconductor layers to a vitreous support constituted by at least two glasses. The semiconductor layers are constituted by an electrically and optically active n-ary III-V compound layer (3) and optional complementary layers for passivation (4), index adaptation (6), and protection (7). To keep the active layer in a compression state and optimize its electrical properties, the structure includes at least two glasses, an intermediate glass (15) providing thermoelastic properties and a supporting glass (16) providing a high softening temperature.

Vitreous semiconductor supporting structure and device realized with

The photocathode is of the type which comprises a photo-emissive layer consisting of at least an active layer of the P-type, a solid support for said semiconductor of a material which is transparent to radiation, a layer having a bonding glass for the photo-emissive layer on the support. The invention is characterized in that the support comprises two parts situated one on top of the other and which are bonded together, namely a thick second part (thickness for example 5 mm) of a type of glass having properties of thermal expansion which are substantially identical to those of the bonding glass and a part in the form of a disk-shaped first part (thickness for example 1 mm) of a material having softening and transition points which are much higher than those of the bonding glass and of the glass of the thick part.

Photocathode

An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.

Semiconductor device for the vacuum-emission of electrons

In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is cooled to a temperature from room temperature to 200.degree. C. During cooling, the structure's upper surface is contacted with a liquid gallium melt in such a manner that the doping elements present in the few remaining drops of the last growth melt not removed by the wiping off are dissolved.

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Montlhery Longpont, France

Pierre Guittard