Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Pierre Gidon

Serge Valette

Gilles Grand

Jean-Paul Garandet

Philippe Pantigny

Norbert Moussy

Sébastien Dubois

Jordi Veirman

Nicolas Enjalbert

Pascale Parrein

Jean-Pierre Jadot

Florent Tanay

Yvon Cazaux

Patrick Pouteau

Laurent Frey

Serge Gidon

Bruno Mourey

Yohan Desieres

Benoit Giffard

Ludovic Poupinet

Adeline Fournier

Stephane Renard

Herve Denis

Jacques Lizet

Paul Philippe

Valerie Lapras

An imager integrated circuit intended to cooperate with an optical system configured to direct light rays from a scene to an inlet face of the circuit, the circuit being configured to perform a simultaneous stereoscopic capture of N images corresponding to N distinct views of the scene, each of the N images corresponding to light rays directed by a portion of the optical system which is different from those directing the rays corresponding to the N&#x2212;1 other images, including:

Imager integrated circuit and stereoscopic image capture device

A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Device and method for restoring silicon-based photovoltaic solar cells

The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.

Device and method for restoring silicon-based solar cells using an ultrasound transducer

Photodetecting device having semiconductor regions separated by a potential barrier

A gas detector including an assembly of two hemispherical caps having opposite concavities, and which are reflective on at least a portion of their opposite surfaces, and a wafer arranged in an equatorial plane of the assembly of the two caps, in the vicinity of but spaced apart from the center of the equatorial plane, including, back-to-back: a diverging light emitter directed towards the first cap and a light receiver directed towards the second cap.

Optical gas detector

A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Photo-detecting device and method of making a photo-detecting device

Imager device for evaluating distances of elements in an image

Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m, m, m) and n substantially transparent layers (d, d, d) which alternate between a first metal layer (m) and an nsubstantially transparent layer (d), each of the n metal layers (m, m, m) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2. Application to 3D mapping and imaging.

Filtering matrix structure, associated image sensor and 3D mapping device

Light reflecting CMOS image sensor

An electrode of a light-emitting device of the OLED type adapted for forming with a second electrode, an optical cavity, including at least one layer based on a material of refraction index nincluding a structured face comprising a plurality of recesses filled with a material of refractive index ndifferent from n.

Electrode of a light-emitting device of the OLED type

The invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters (R, V, B), an elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers (m, m, m) and n substantially transparent layers (d, d, d) which alternate between a first metal layer (m) and an nsubstantially transparent layer (d), the n metal layers (m, m, m) each having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of an elementary optical filter, n being an integer larger than or equal to 2. Application to miniature image sensors.

Optical filtering matrix structure and associated image sensor

A device for interference spectroscopic analysis of radiation is of the interference type. The device includes at least a first reflecting layer onto which is deposited a multilayer of alternately transparent and photo-absorbing films. Each photo-absorbing layer is connected to an electronic detection unit supplying a primary electronic signal. The device also includes an electronic analyzing unit for analyzing the primary signals and configured in such a manner as to determine the spectral distribution of the original radiation.

Interference spectroscopic analysis device

The invention concerns a matrix structure of multispectral detectors () comprising:

Multispectral detector matrix

The invention relates to a photodetectors array that will be hybridized on a readout circuit () and realized from a wafer of semiconducting material (). The wafer is divided into pixels (), each pixel forming a photodetector, the pixels being separated from each other by separation means formed in the wafer and comprising a photogrid for photodetectors, each photodetector having a connection pad () to hybridize the photodetectors array to the readout circuit.

Photodetectors array with isolated pixels and storage grid, hybridized on a readout circuit

An array of photodetectors intended to be hybridized on a readout circuit and fabricated from a wafer in semiconductor material. The wafer is divided into pixels, the pixels being separated from one another by walls formed crosswise over the entire thickness of the wafer, the hybridization surface having connection pads enabling hybridization of the photodetector array to the readout circuit.

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Echirolles, France

Pierre Gidon