Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Centre National De La Recherche Scientifique-cnrs

Pierre Ferret

Ivan-Christophe Robin

Thierry Baron

Pascal Gentile

Philippe Gilet

Thomas Ernst

Sergio Nicoletti

Johan Rothman

Alexei Tchelnokov

Amélie Dussaigne

Stephane Getin

Stéphane Getin

Delphine Neel

Bassem Salem

Jean-Paul Zanatta

Philippe Duvaut

Abdelkarim Kahouli

The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.

Optoelectronic device comprising three-dimensional semiconductor structures with a wider single-crystal portion

A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.

Multiple quantum well light-emitting device

A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate.

Method of formation of nanowires and method of manufacture of associated optical component

A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Method for making a light-emitting microelectronic device with semi-conducting nanowires formed on a metal substrate

A 3D imaging device is comprised of a photodetector matrix, a layer of material fixed on a face of the photodetector matrix, the layer of material being capable of absorbing or reflecting light, an opening being formed in said layer of material at each photodetector, a layer of insulating material fixed on said layer of material capable of reflecting or absorbing light, the layer of insulating material having a face surrounding, in the body thereof, a set of G waveguides, each waveguide of the set of waveguides being positioned vertically in relation to said face, opposite an opening, the heights of the different waveguides, considered in relation to the face of the layer of insulating material, defining N distinct levels, N being a whole number greater than or equal to 2.

3D imaging device and method for manufacturing same

A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.

Light-emitting diode in semiconductor material

Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes

A dual-band planar infrared detector with space-time coherence, with a stack of semiconductor layers (,) forming first and second photodiodes. The detector has a planar structure in which each layer has a part showing on a surface (,) substantially perpendicular to the stack.

Growing community of inventors

Grenoble, France

Pierre Ferret