Innovative Silicon S.a.

Innovative Silicon Isi Sa

Pierre Fazan

Serguei Okhonin

A semiconductor integrated circuit device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor, and the adjustment of the net electrical charge by the input signals can be at least partially cancelled by applying electrical voltage signals between the gate and the drain and between the source and the drain.

Semiconductor device

A semiconductor device such as a DRAM memory device is disclosed. A substrate () of semiconductor material is provided with energy band modifying means in the form of a box region () and is covered by an insulating layer (). A semiconductor layer () has source () and drain () regions formed therein to define bodies () of respective field effect transistors. The box region () is more heavily doped than the adjacent body (), but less highly doped than the corresponding source () and drain (), and modifies the valence and/or conduction band of the body () to increase the amount of electrical charge which can be stored in the body ().

A data storage device such as a DRAM memory having a plurality of data storage cellsis disclosed. Each data storage cellhas a physical parameter which varies with time and represents one of two binary logic states. A selection circuit, writing circuitsand a refreshing circuitapply input signals to the data storage cells to reverse the variation of the physical parameter with time of at least those cells representing one of the binary logic states by causing a different variation in the physical parameter of cells in one of said states than in the other.

Data storage device and refreshing method for use with such device

A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor, and the adjustment of the net electrical charge by the input signals can be at least partially cancelled by applying electrical voltage signals between the gate and the drain and between the source and the drain.

A semiconductor device such as a DPAM memory device is disclosed. A, Substrate () of semiconductor material is provided with energy band modifying means in the form of a box region () and is covered by an insulating layer (). A semi-conductor layer () has source () and drain () regions formed therein to define bodies () of respective field effect transistors. The box region () is more heavily doped than the adjacent body (), but less highly doped than the corresponding source () and drain (), and modifies the valence and/or conduction band of the body () to increase the amount of electrical charge which can be stored in the body ().

Growing community of inventors

Morges, Switzerland

Pierre Fazan